Treffer: Publisher's note: "High-temperature annealing induced electrical compensation in UID and Sn doped β-Ga2O3 bulk samples: The role of VGa–Sn complexes" [J. Appl. Phys. 137, 055703 (2025)].
Title:
Publisher's note: "High-temperature annealing induced electrical compensation in UID and Sn doped β-Ga2 O3 bulk samples: The role of VGa –Sn complexes" [J. Appl. Phys. 137, 055703 (2025)].
Authors:
von Bardeleben, H. J.1 (AUTHOR) vonbarde@insp.jussieu.fr, Zhou, Xuanze2 (AUTHOR) zhouxz@ustc.edu.cn, Zhou, Jingbo2 (AUTHOR), Xu, Guangwei2 (AUTHOR), Long, Shibing2 (AUTHOR), Gerstmann, U.3,4 (AUTHOR)
Source:
Journal of Applied Physics. 2/28/2025, Vol. 137 Issue 8, p1-1. 1p.
Subject Terms:
Database:
Academic Search Index
Weitere Informationen
The article in the Journal of Applied Physics discusses high-temperature annealing-induced electrical compensation in UID and Sn-doped β-Ga2O3 bulk samples, focusing on the role of VGa-Sn complexes. The study presents experimental and theoretical results of EPR parameters related to defect structures in β-Ga2O3, highlighting differences in measurements due to sample orientation errors. The formatting errors in Table I were corrected in all online versions of the article on 10 February 2025. [Extracted from the article]