Kachi, T., Narita, T., Sakurai, H., Matys, M., Kataoka, K., Hirukawa, K., Sumida, K., Horita, M., Ikarashi, N., Sierakowski, K., Bockowski, M., & Suda, J. (2022). Process engineering of Ga N power devices via selective-area p-type doping with ion implantation and ultra-high-pressure annealing. Journal of Applied Physics, 132(13), 1-14. https://doi.org/10.1063/5.0107921
ISO-690 (author-date, English)KACHI, Tetsu, NARITA, Tetsuo, SAKURAI, Hideki, MATYS, Maciej, KATAOKA, Keita, HIRUKAWA, Kazufumi, SUMIDA, Kensuke, HORITA, Masahiro, IKARASHI, Nobuyuki, SIERAKOWSKI, Kacper, BOCKOWSKI, Michal und SUDA, Jun, 2022. Process engineering of Ga N power devices via selective-area p-type doping with ion implantation and ultra-high-pressure annealing. Journal of Applied Physics. 7 Oktober 2022. Vol. 132, no. 13, p. 1-14. DOI 10.1063/5.0107921.
Modern Language Association 9th editionKachi, T., T. Narita, H. Sakurai, M. Matys, K. Kataoka, K. Hirukawa, K. Sumida, M. Horita, N. Ikarashi, K. Sierakowski, M. Bockowski, und J. Suda. „Process Engineering of Ga N Power Devices via Selective-Area P-Type Doping With Ion Implantation and Ultra-High-Pressure Annealing.“. Journal of Applied Physics, Bd. 132, Nr. 13, Oktober 2022, S. 1-14, https://doi.org/10.1063/5.0107921.
Mohr Siebeck - Recht (Deutsch - Österreich)Kachi, Tetsu/Narita, Tetsuo/Sakurai, Hideki/Matys, Maciej/Kataoka, Keita/Hirukawa, Kazufumi u. a.: Process engineering of Ga N power devices via selective-area p-type doping with ion implantation and ultra-high-pressure annealing., Journal of Applied Physics 2022, 1-14.
Emerald - HarvardKachi, T., Narita, T., Sakurai, H., Matys, M., Kataoka, K., Hirukawa, K., Sumida, K., Horita, M., Ikarashi, N., Sierakowski, K., Bockowski, M. und Suda, J. (2022), „Process engineering of Ga N power devices via selective-area p-type doping with ion implantation and ultra-high-pressure annealing.“, Journal of Applied Physics, Vol. 132 No. 13, S. 1-14.