Lin, C.-Y., Tseng, T.-L., Emon, S. H., & Tsai, T.-H. (2025). Generative AI-Driven Data Augmentation for Robust Virtual Metrology: GANs, VAEs, and Diffusion Models. IEEE Transactions on Semiconductor Manufacturing, 38(3), 642-658. https://doi.org/10.1109/TSM.2025.3569229
ISO-690 (author-date, English)LIN, Chin-Yi, TSENG, Tzu-Liang, EMON, Solayman Hossain und TSAI, Tsung-Han, 2025. Generative AI-Driven Data Augmentation for Robust Virtual Metrology: GANs, VAEs, and Diffusion Models. IEEE Transactions on Semiconductor Manufacturing. 1 August 2025. Vol. 38, no. 3, p. 642-658. DOI 10.1109/TSM.2025.3569229.
Modern Language Association 9th editionLin, C.-Y., T.-L. Tseng, S. H. Emon, und T.-H. Tsai. „Generative AI-Driven Data Augmentation for Robust Virtual Metrology: GANs, VAEs, and Diffusion Models.“. IEEE Transactions on Semiconductor Manufacturing, Bd. 38, Nr. 3, August 2025, S. 642-58, https://doi.org/10.1109/TSM.2025.3569229.
Mohr Siebeck - Recht (Deutsch - Österreich)Lin, Chin-Yi/Tseng, Tzu-Liang/Emon, Solayman Hossain/Tsai, Tsung-Han: Generative AI-Driven Data Augmentation for Robust Virtual Metrology: GANs, VAEs, and Diffusion Models., IEEE Transactions on Semiconductor Manufacturing 2025, 642-658.
Emerald - HarvardLin, C.-Y., Tseng, T.-L., Emon, S.H. und Tsai, T.-H. (2025), „Generative AI-Driven Data Augmentation for Robust Virtual Metrology: GANs, VAEs, and Diffusion Models.“, IEEE Transactions on Semiconductor Manufacturing, Vol. 38 No. 3, S. 642-658.