Result: Optically pumped stimulated emission in ZnO/ZnMgO multiple quantum wells prepared by combinatorial techniques

Title:
Optically pumped stimulated emission in ZnO/ZnMgO multiple quantum wells prepared by combinatorial techniques
Source:
Combinatorial and composition spread techniques in materials and device development II (San Jose CA, 22-23, 25 January 2001)SPIE proceedings series. :68-76
Publisher Information:
Bellingham WA: SPIE, 2001.
Publication Year:
2001
Physical Description:
print, 18 ref
Original Material:
INIST-CNRS
Subject Terms:
Electronics, Electronique, Optics, Optique, Condensed state physics, Physique de l'état condensé, Physics, Physique, Telecommunications, Télécommunications, Sciences exactes et technologie, Exact sciences and technology, Sciences appliquees, Applied sciences, Electronique, Electronics, Electronique des semiconducteurs. Microélectronique. Optoélectronique. Dispositifs à l'état solide, Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices, Interfaces, Fabrication microélectronique (technologie des matériaux et des surfaces), Microelectronic fabrication (materials and surfaces technology), Caractéristique thermique, Thermal characteristic, Característica térmica, Diffusion inélastique, Inelastic scattering, Difusión inelástica, Emission optique, Light emission, Emisión óptica, Emission stimulée, Stimulated emission, Emisión estimulada, Energie liaison, Binding energy, Energía enlace, Epitaxie jet moléculaire, Molecular beam epitaxy, Fabrication microélectronique, Microelectronic fabrication, Fabricación microeléctrica, Faisceau laser, Laser beam, Haz láser, Forme onde, Waveform, Forma onda, Interaction exciton exciton, Exciton-exciton interactions, Mesure gain, Gain measurement, Mesure émission, Emission measure, Medida emisión, Méthode combinatoire, Combinatorial method, Método combinatorio, Plasma électron trou, Electron hole plasma, Plasma electrón hueco, Puits quantique, Quantum well, Pozo cuántico, Résultat expérimental, Experimental result, Resultado experimental, Spectre émission, Emission spectrum, Espectro emisión, Structure interface, Interface structure, Estructura interfaz, Zinc oxyde, Zinc oxide, Zinc óxido
Document Type:
Conference Conference Paper
File Description:
text
Language:
English
Author Affiliations:
RIKEN-The Inst. of Phys. and Chem. Res., Sendai, 980-0845 Miyagi, Japan
Dept. of Phys., Hong Kong Univ. of Sci. & Tech., Hong-Kong
Tokyo Inst. of Tech./COMET-NIRIM, Yokohama 226-8502, Japan
CREST-JST and Tokyo Inst. of Tech./COMET-NIRIM, Yokohama 226-8503, Japan
Rights:
Copyright 2001 INIST-CNRS
CC BY 4.0
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
Notes:
Electronics
Accession Number:
edscal.1020004
Database:
PASCAL Archive

Further Information

High quality ZnO/Zn1-xMgxO multi-quantum wells (MQWs) have been prepared on lattice-matched ScAlMgO4 substrates by laser-MBE method. Nine pixels of MQWs having different well widths were integrated in the same substrate by means of combinatorial masking techniques, which provided excellent specimens to systematically study the dependence of physical properties of MQWs on well widths. Optically pumped stimulated emission spectra were measured in these ZnO/Zn1-xMgxO multi-quantum wells by using a tunable pulsed dye laser as excitation source. We investigated the pump-intensity dependence of the stimulated emission spectra from 5 to 300 K. At low temperatures, only one peak in the stimulated emission was observed, which could be assigned to the emission induced by exciton-exciton inelastic scattering (P-band). When the temperature increases above 160 K, there appears an additional peak at the lower energy side of the P-band, which was assigned to electron-hole plasma emission. However, the emission due to the exciton-exciton scattering still remains up to room temperature. The gain spectrum for a multi-quantum well sample has been obtained by variable stripe method at room temperature. At an excitation intensity of about 2 MW/cm2, the peak gains for the P-band and electron-hole plasma emission are 239 cm-1 and 380 cm-1, respectively. The exciton binding energy was deduced from the energy difference between the P-band and free exciton band. The exciton binding energies of these samples having different well widths were found to increase with decreasing the well widths due to the quantum confinement effect. This enhancement of exciton binding energy should be favorable for the stability of exciton states at higher temperatures.