Treffer: Exploring structural mechanisms in disordered materials using the activation-relaxation technique
Title:
Exploring structural mechanisms in disordered materials using the activation-relaxation technique
Authors:
Source:
Proceedings of the Europhysics Conference on Computational Physics CCP 1998 Modeling Collective Phenomena in Complex SystemsComputer physics communications. 121-22:206-209
Publisher Information:
Amsterdam: Elsevier Science, 1999.
Publication Year:
1999
Physical Description:
print, 10 ref
Original Material:
INIST-CNRS
Subject Terms:
Computer science, Informatique, Theoretical physics, Physique théorique, Sciences exactes et technologie, Exact sciences and technology, Physique, Physics, Generalites, General, Instruments, appareillage, composants et techniques communs à plusieurs branches de la physique et de l'astronomie, Instruments, apparatus, components and techniques common to several branches of physics and astronomy, Informatique en physique expérimentale, Computers in experimental physics, Modélisation et simulation par ordinateur, Computer modeling and simulation, Etat condense: structure, proprietes mecaniques et thermiques, Condensed matter: structure, mechanical and thermal properties, Structure des liquides et des solides; cristallographie, Structure of solids and liquids; crystallography, Solides désordonnés, Disordered solids, Activation, Activación, Analyse structurale, Structural analysis, Análisis estructural, Cristal désordonné, Disordered crystals, Cristal desordenado, Matériau amorphe, Amorphous material, Material amorfo, Méthode relaxation, Relaxation method, Método relajación, Semiconducteur amorphe, Amorphous semiconductors, Simulation
Document Type:
Konferenz
Conference Paper
File Description:
text
Language:
English
Author Affiliations:
Theoretical Physics, Utrecht University, Princetonplein 5, 3584 CC Utrecht, Netherlands
Department of Physics and Astronomy, Ohio University, Athens, OH 45701, United States
Department of Physics and Astronomy, Ohio University, Athens, OH 45701, United States
ISSN:
0010-4655
Rights:
Copyright 2000 INIST-CNRS
CC BY 4.0
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
CC BY 4.0
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
Notes:
Metrology
Physics of condensed state: structure, mechanical and thermal properties
Physics of condensed state: structure, mechanical and thermal properties
Accession Number:
edscal.1228048
Database:
PASCAL Archive
Weitere Informationen
Structural mechanisms in disordered materials like amorphous semi-conductors and glasses can be explored with the activation-relaxation technique (ART). The application of a sequence of such mechanisms allows for the generation of well-relaxed structures. The method and its application in the study of the microscopic changes in amorphous silicon and silica glass are reviewed, and two recent improvements are presented.