Treffer: Electronic states in the Anderson model of localization : benchmarking eigenvalue algorithms

Title:
Electronic states in the Anderson model of localization : benchmarking eigenvalue algorithms
Source:
Proceedings of the Europhysics Conference on Computational Physics CCP 1998 Modeling Collective Phenomena in Complex SystemsComputer physics communications. 121-22:517-523
Publisher Information:
Amsterdam: Elsevier Science, 1999.
Publication Year:
1999
Physical Description:
print, 28 ref
Original Material:
INIST-CNRS
Subject Terms:
Computer science, Informatique, Theoretical physics, Physique théorique, Sciences exactes et technologie, Exact sciences and technology, Physique, Physics, Generalites, General, Instruments, appareillage, composants et techniques communs à plusieurs branches de la physique et de l'astronomie, Instruments, apparatus, components and techniques common to several branches of physics and astronomy, Informatique en physique expérimentale, Computers in experimental physics, Modélisation et simulation par ordinateur, Computer modeling and simulation, Etat condense: structure electronique, proprietes electriques, magnetiques et optiques, Condensed matter: electronic structure, electrical, magnetic, and optical properties, Etats électroniques, Electron states, Méthodes de calcul de structure électronique, Methods of electronic structure calculations, Transitions métal-isolant et autres transitions électroniques, Metal-insulator transitions and other electronic transitions, Structure électronique et propriétés électriques des surfaces, interfaces, couches minces et structures de basse dimensionnalité, Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures, Etats électroniques de surface et d'interface, Surface and interface electron states, Effets de localisation (localisation d'anderson ou localisation faible), Localization effects (anderson or weak localization), Weak or Anderson localization, Cote nivellement, Bench mark, Cota nivelación, Etat électronique, Electron state, Estado electrónico, Etude théorique, Theoretical study, Fonction onde, Wave functions, Localisation, Localization, Localización, Modèle Anderson, Anderson model, Système multifractal, Multifractal system, Sistema multifractal, Transition métal isolant, Metal-insulator transition
Document Type:
Konferenz Conference Paper
File Description:
text
Language:
English
Author Affiliations:
Institut für Physik, Ulrich Elsner, Volker Mehrmann, Fakultät für Mathematik, Technische Universität, 09107 Chemnitz, Germany
ISSN:
0010-4655
Rights:
Copyright 2000 INIST-CNRS
CC BY 4.0
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
Notes:
Metrology

Physics of condensed state: electronic structure, electrical, magnetic and optical properties
Accession Number:
edscal.1228896
Database:
PASCAL Archive

Weitere Informationen

Multifractal analysis is a convenient tool to investigate localization properties of wavefunctions. For this purpose. eigenvectors for system sizes as large as possible are needed. We apply several modern eigenvalue algorithms to compute a few eigenvectors for the sparse, real, symmetric, and indefinite matrices of the Anderson model of localization in the hand center. This seemingly innocuous problem turns out to be a major challenge for all modern eigenvalue algorithms, because we find the Lanczos implementation of Cullum and Willoughby to be the fastest and most memory efficient algorithm for our matrix type. It can, moreover, be effectively parallelized. Here, its results are used for the multifractal analysis, in particular to demonstrate that the singularity spectra of the wave functions do not depend on the system size at the metal-insulator transition.