Treffer: Modulation transfer function of photoconductive x-ray image detectors: effects of charge carrier trapping

Title:
Modulation transfer function of photoconductive x-ray image detectors: effects of charge carrier trapping
Authors:
ZAHANGIR KABIR, M, KASAP, S. O
Source:
Journal of physics. D, Applied physics (Print). 36(19):2352-2358
Publisher Information:
Bristol: Institute of Physics, 2003.
Publication Year:
2003
Physical Description:
print, 22 ref
Original Material:
INIST-CNRS
Subject Terms:
Condensed state physics, Physique de l'état condensé, Physics, Physique, Plasma physics, Physique des plasmas, Sciences exactes et technologie, Exact sciences and technology, Physique, Physics, Generalites, General, Instruments, appareillage, composants et techniques communs à plusieurs branches de la physique et de l'astronomie, Instruments, apparatus, components and techniques common to several branches of physics and astronomy, Instrumentation et techniques x et γ, X- and γ-ray instruments and techniques, Sources, miroirs, réseaux et détecteurs dans le domaine x et γ, X- and γ-ray sources, mirrors, gratings and detectors, Domaines classiques de la physique (y compris les applications), Fundamental areas of phenomenology (including applications), Optique, Optics, Formation des images et traitement optique, Imaging and optical processing, Fonctions de transfert optique et de transfert de modulation, Modulation and optical transfer functions, X- and γ-ray sources, mirrors, gratings, and detectors, Cadmium Zinc Tellurure, Cadmium Zinc Tellurides, Capteur image, Image sensors, Composé ternaire, Ternary compounds, Dispositif photoconducteur, Photoconducting devices, Distribution charge, Charge distribution, Etude théorique, Theoretical study, Fonction transfert modulation, Modulation transfer function, Función transferencia modulación, Image numérique, Digital image, Imagen numérica, Imagerie RX, X-ray imaging, Photoconducteur, Photoconductors, Piégeage porteur charge, Charge carrier trapping, Captura portador carga
Document Type:
Fachzeitschrift Article
File Description:
text
Language:
English
Author Affiliations:
Department of Electrical Engineering, University of Saskatchewan, 57 Campus Drive, Saskatoon, SK, S7N 5A9, Canada
ISSN:
0022-3727
Access URL:
http://pascal-francis.inist.fr/vibad/index.php?action=search&terms=15158386
Rights:
Copyright 2003 INIST-CNRS
CC BY 4.0
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
Notes:
Metrology

Physics: optics
Accession Number:
edscal.15158386
Database:
PASCAL Archive

Weitere Informationen

An analytical expression for calculating the modulation transfer function (MTF) due to distributed carrier trapping in the bulk of the photoconductor of a direct conversion pixellated x-ray image detector is derived using the trapped charge distribution across the photoconductor. The analytical expressions of trapped charge distributions are also derived by solving the continuity equation for both types of carriers (electrons and holes). The MTF of photoconductive x-ray detectors is analysed in terms of normalized parameters, namely (a) the normalized x-ray absorption depth (absorption depth/photoconductor thickness) and (b) normalized carrier schubwegs (schubweg/thickness). Trapping of the carriers that move towards the pixel electrodes degrades the MTF performance, whereas trapping of the carriers that move away from the pixels improves the sharpness of the x-ray image. The MTF model is applied to polycrystalline CdZnTe detectors and is fitted to recently published experimental results. The theoretical model shows very good agreement with reported experimental data.