Treffer: Experimental study of spatial resolution of a semiconductor-gas discharge infrared image converter : Dynamics in nonlinear optics and quantum optics
Institut für Angewandte Physik, Münster University, Corrensstr. 2/4, 48149 Münster, Germany
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Physics: optics
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Experimental results of spatial resolution measurements for an infrared(IR)-to-visible image converter on the basis of a plane-parallel semiconductor-gas discharge (SGD) device are reported. The photodetector wafer made of Si:Zn transforms an incoming IR image into an electron image which gets visualized by a thin adjacent layer of Ar discharge operating in the Townsend mode. Spatial resolution of the converter is measured by the edge-mask technique with computing the line spread function (LSF) and-modulation transfer function (MTF). Obtained dependences prove that the spatial resolution is mainly determined by the gas discharge layer and not by the photodetector. Simple estimates show that diffusion of electrons, ions and excited atoms plays rather a minor role and cannot explain the results. As plausible explanation, the phenomenon of resonance radiation imprisonment is considered.