Result: Structure and magnetism of Coa(1-x)MnaxGeb epitaxial films
Title:
Structure and magnetism of Coa(1-x)MnaxGeb epitaxial films
Source:
CMST-3: proceedings of the third Japan-US workshop on combinatorial material science and technology, Okinawa, Japan, 7-10 December, 2004Applied surface science. 252(7):2512-2517
Publisher Information:
Amsterdam: Elsevier Science, 2006.
Publication Year:
2006
Physical Description:
print, 18 ref
Original Material:
INIST-CNRS
Subject Terms:
General chemistry, physical chemistry, Chimie générale, chimie physique, Crystallography, Cristallographie cristallogenèse, Nanotechnologies, nanostructures, nanoobjects, Nanotechnologies, nanostructures, nanoobjets, Condensed state physics, Physique de l'état condensé, Sciences exactes et technologie, Exact sciences and technology, Physique, Physics, Etat condense: structure electronique, proprietes electriques, magnetiques et optiques, Condensed matter: electronic structure, electrical, magnetic, and optical properties, Propriétés et matériaux magnétiques, Magnetic properties and materials, Propriétés magnétiques des surfaces, couches minces et multicouches, Magnetic properties of surface, thin films and multilayers, Propriétés magnétiques des monocouches et couches minces, Magnetic properties of monolayers and thin films, Domaines interdisciplinaires: science des materiaux; rheologie, Cross-disciplinary physics: materials science; rheology, Science des matériaux, Materials science, Méthodes de dépôt de films et de revêtements; croissance de films et épitaxie, Methods of deposition of films and coatings; film growth and epitaxy, Epitaxie par faisceaux chimiques, ioniques, atomiques et moléculaires, Molecular, atomic, ion, and chemical beam epitaxy, Alliage Heusler, Heusler alloys, Couche épitaxique, Epitaxial layers, Croissance film, Film growth, Diagramme phase magnétique, Magnetic-phase diagrams, Effet concentration, Quantity ratio, Epitaxie jet moléculaire, Molecular beam epitaxy, Magnétisme, Magnetism, Méthode combinatoire, Combinatorial method, Método combinatorio, Co Ge Mn, Combinatorial molecular beam epitaxy, Epitaxial films, Phase diagrams
Document Type:
Conference
Conference Paper
File Description:
text
Language:
English
Author Affiliations:
Department of Physics and Astronomy, University of North Carolina, Chapel Hill, NC 27599, United States
Advanced Photon Source, Argonne National Laboratory, Argonne, IL 60439, United States
Advanced Photon Source, Argonne National Laboratory, Argonne, IL 60439, United States
ISSN:
0169-4332
Rights:
Copyright 2006 INIST-CNRS
CC BY 4.0
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
CC BY 4.0
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
Notes:
Physics and materials science
Physics of condensed state: electronic structure, electrical, magnetic and optical properties
Physics of condensed state: electronic structure, electrical, magnetic and optical properties
Accession Number:
edscal.17567805
Database:
PASCAL Archive
Further Information
The structural and magnetic phase diagrams of Coax(1-x)MnaxGeb epitaxial films near the composition of Heusler alloy Co2MnGe have been studied using combinatorial molecular beam epitaxy techniques. Epitaxial growth on Ge (1 1 1) has been stabilized over nearly the entire composition range of the ternary system. Epitaxial constraints play an important role for the small number of observed structural phases. The variety of high-temperature magnetic properties, and the structural and chemical compatibilities with group IV elements make the ternary system promising for the science and applications of spintronics.