Result: InAs/(GaIn)Sb short-period superlattices for focal plane arrays

Title:
InAs/(GaIn)Sb short-period superlattices for focal plane arrays
Source:
Infrared technology and applications XXXI (28 March-1 April 2005, Orlando, Florida, USA)Proceedings of SPIE, the International Society for Optical Engineering. :123-130
Publisher Information:
Bellingham, Wash., USA: SPIE, 2005.
Publication Year:
2005
Physical Description:
print, 10 ref 2
Original Material:
INIST-CNRS
Subject Terms:
Electronics, Electronique, Metrology and instrumentation, Métrologie et instrumentation, Optics, Optique, Physics, Physique, Sciences exactes et technologie, Exact sciences and technology, Physique, Physics, Generalites, General, Instruments, appareillage, composants et techniques communs à plusieurs branches de la physique et de l'astronomie, Instruments, apparatus, components and techniques common to several branches of physics and astronomy, Instrumentation, équipements et techniques en infrarouge, onde submillimétrique, hyperfréquence et radiofréquence, Infrared, submillimeter wave, microwave and radiowave instruments, equipment and techniques, Bolomètres; récepteurs et détecteurs en infrarouge, onde submillimétrique, hyperfréquence et radiofréquence, Bolometer; infrared, submillimeter wave, microwave and radiowave receivers and detectors, Domaines classiques de la physique (y compris les applications), Fundamental areas of phenomenology (including applications), Optique, Optics, Formation des images et traitement optique, Imaging and optical processing, Fonctions de transfert optique et de transfert de modulation, Modulation and optical transfer functions, Caméra IR, Infrared camera, Cámara IR, Composé binaire, Binary compounds, Détecteur IR, Infrared detectors, Détecteur rayonnement, Radiation detectors, Fonction transfert modulation, Modulation transfer function, Función transferencia modulación, Imagerie thermique, Thermal imaging, Indium arséniure, Indium arsenides, Matrice plan focal, Focal plane arrays, Photodiode, Photodiodes, Rayonnement IR moyen, Mid infrared radiation, Radiación infrarroja media, Rendement quantique, Quantum yield, Superréseau, Superlattices, 0757K, 4230L, As In, InAs
Document Type:
Conference Conference Paper
File Description:
text
Language:
English
Author Affiliations:
Fraunhofer-Institut für Angewandte Festkörperphysik, Freiburg i. Br, Germany
AEG Infrarot-Module GmbH (AIM), Heilbronn, Germany
ISSN:
0277-786X
Rights:
Copyright 2006 INIST-CNRS
CC BY 4.0
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
Notes:
Metrology

Physics: optics
Accession Number:
edscal.17833218
Database:
PASCAL Archive

Further Information

An infrared camera based on a 256x256 focal plane array for the Mid-IR spectral range (3-5 μm) has been realized for the first time with InAs/GaSb short-period superlattices. The detector shows a cut-off wavelength of 5.4 μm and reveals a quantum efficiency of 30%. The noise equivalent temperature difference (NETD) reaches 9.4 mK at 73 K with F/2 optics and 6.5 ms integration time. Excellent thermal images with low NETD values and a very good modulation transfer function are presented. Furthermore, a new method to passivate InAs/GaInSb superlattice photodiodes for the 8-10 μm regime is demonstrated. The approach is based on the epitaxial overgrowth of wet-etched mesa diodes using lattice matched AlGaAsSb. A complete suppression of surface leakage currents in small sized test diodes with 70 μm diameter is observed.