Result: Linearity improvement of HBT-based doherty power amplifiers based on a simple analytical model

Title:
Linearity improvement of HBT-based doherty power amplifiers based on a simple analytical model
Source:
Bridge to the future: 2006 IEEE MTT-S International Microwave Symposium, 11-16 June 2006, San Francisco, CA, USAIEEE transactions on microwave theory and techniques. 54(12):4479-4488
Publisher Information:
New York, NY: Institute of Electrical and Electronics Engineers, 2006.
Publication Year:
2006
Physical Description:
print, 21 ref 2
Original Material:
INIST-CNRS
Subject Terms:
Electronics, Electronique, Optics, Optique, Telecommunications, Télécommunications, Sciences exactes et technologie, Exact sciences and technology, Sciences appliquees, Applied sciences, Electronique, Electronics, Circuits électriques, optiques et optoélectroniques, Electric, optical and optoelectronic circuits, Propriétés des circuits, Circuit properties, Circuits électroniques, Electronic circuits, Amplificateurs, Amplifiers, Accord phase, Phase tuning, Sintonización fase, Accès multiple répartition code, Code division multiple access, Acceso múltiple división código, Ajustement modèle, Model matching, Ajustamiento modelo, Amplificateur puissance, Power amplifier, Amplificador potencia, Distorsion intermodulation, Intermodulation distortion, Evaluation performance, Performance evaluation, Evaluación prestación, Gain, Ganancia, Grande puissance, High power, Gran potencia, Implémentation, Implementation, Implementación, Linéarité, Linearity, Linearidad, Méthode analytique, Analytical method, Método analítico, Ordre 3, Third order, Orden 3, Retard phase, Phase delay, Retardo fase, Signal entrée, Input signal, Señal entrada, Simulation, Simulación, Transistor bipolaire hétérojonction, Heterojunction bipolar transistors, Télécommunication sans fil, Wireless telecommunication, Telecomunicación sin hilo, Téléphone portable, Mobile phone, Teléfono móvil, Code division multiple access (CDMA), Doherty amplifier, heterojunction bipolar transistor (HBT)
Document Type:
Conference Conference Paper
File Description:
text
Language:
English
Author Affiliations:
Department of Electrical and Computer Engineering, University of California at San Diego, La Jolla, CA 92093, United States
Skyworks Solutions Inc, Newbury Park, CA 91320, United States
Agilent Technologies, Santa Rosa, CA 94543, United States
ISSN:
0018-9480
Rights:
Copyright 2007 INIST-CNRS
CC BY 4.0
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
Notes:
Electronics
Accession Number:
edscal.18394216
Database:
PASCAL Archive

Further Information

A simple analytical model is proposed and shown to be effective in predicting the nonlinear behavior of single-ended amplifiers, as well as Doherty amplifiers implemented with GaAs heterojunction bipolar transistors (HBTs) for handset applications. The analytical model is based on linear and nonlinear components extracted from a vertical bipolar inter-company model for Skyworks Solutions Inc.'s InGaP/GaAs HBT devices. Equations derived from the model provide insights into effects of individual components on the gain and phase of both the single-ended and Doherty amplifiers. The model indicates that tuning the phase delay inserted in front of the auxiliary power amplifier (PA) within the Doherty can improve linearity at a high input power. The efficacy of the model is demonstrated by experimental results in which, for a Doherty PA with a tuned phase delay at the auxiliary PA side, the measured gain and phase agree with the simulation results. Furthermore, the third-order intermodulation distortion performance is improved as much as 8 dB when compared with a Doherty PA without phase delay tuning.