• The scaling challenges of CMOS...

Treffer: The scaling challenges of CMOS and the impact on high-density non-volatile memories

Title:
The scaling challenges of CMOS and the impact on high-density non-volatile memories
Authors:
BALDI, L, BEZ, Roberto
Source:
4th European workshop on innovative mass storage technologies, Aachen, 28-29 September 2004Microsystem technologies. 13(2):133-138
Publisher Information:
Berlin: Springer, 2007.
Publication Year:
2007
Physical Description:
print, 1/4 p
Original Material:
INIST-CNRS
Subject Terms:
Electronics, Electronique, Mechanical engineering, Génie mécanique, Metrology and instrumentation, Métrologie et instrumentation, Sciences exactes et technologie, Exact sciences and technology, Sciences appliquees, Applied sciences, Electronique, Electronics, Electronique des semiconducteurs. Microélectronique. Optoélectronique. Dispositifs à l'état solide, Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices, Circuits intégrés, Integrated circuits, Circuits intégrés par fonction (dont mémoires et processeurs), Integrated circuits by function (including memories and processors), Appareil photographique, Camera, Máquina fotográfica, Effet dimensionnel, Size effect, Efecto dimensional, Mémoire flash, Flash memory, Memoria flash, Mémoire non volatile, Non volatile memory, Memoria no volátil, Technologie MOS complémentaire, Complementary MOS technology, Tecnología MOS complementario
Document Type:
Konferenz Conference Paper
File Description:
text
Language:
English
Author Affiliations:
STMicroelectronics, Front-End Technology and Manufacturing, Via C. Olivetti 2, 20041 Agrate Brianza, Italy
ISSN:
0946-7076
Access URL:
http://pascal-francis.inist.fr/vibad/index.php?action=search&terms=18441748
Rights:
Copyright 2007 INIST-CNRS
CC BY 4.0
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
Notes:
Electronics
Accession Number:
edscal.18441748
Database:
PASCAL Archive

Weitere Informationen

Solid-state mass storage has experienced recently an explosive growth, mainly related to digital consumer application (digital cameras, MP3 players, USB keys). The demand is not expected to slow down in the near future. Present storage technology is based on NAND Flash, and it appears that there is still margin to scale it down at least to the 45 nm node. The likely appearance of physical limits to scalability is pushing for the investigation of alternative storage technologies, and several solutions have been proposed. However, any kind of memory needs a selection mechanism, and related parasitic effects can be a severe limitation to scaling. Scaling challenges of select devices (mostly CMOS), and their impact on memory scaling will be investigated, and alternatives proposed.