Treffer: The effect of aspect ratio scaling on hydrostatic stress in passivated interconnects

Title:
The effect of aspect ratio scaling on hydrostatic stress in passivated interconnects
Authors:
ANG, D, WONG, C. C, RAMANUJAN, R. V
Source:
Proceedings of the TMS Symposium - Mechanical Behaviour of Thin Films and Small Structures, San Francisco, California, February 13-17, 2005Thin solid films. 515(6):3246-3252
Publisher Information:
Lausanne: Elsevier Science, 2007.
Publication Year:
2007
Physical Description:
print, 25 ref
Original Material:
INIST-CNRS
Subject Terms:
Crystallography, Cristallographie cristallogenèse, Electronics, Electronique, Metallurgy, welding, Métallurgie, soudage, Condensed state physics, Physique de l'état condensé, Sciences exactes et technologie, Exact sciences and technology, Physique, Physics, Etat condense: structure, proprietes mecaniques et thermiques, Condensed matter: structure, mechanical and thermal properties, Structure des liquides et des solides; cristallographie, Structure of solids and liquids; crystallography, Défauts et impuretés dans les cristaux; microstructure, Defects and impurities in crystals; microstructure, Défauts microscopiques (cavités, inclusions, etc.), Microscopic defects (voids, inclusions, etc.), Aluminium, Cavité dans réseau, Voids, Cuivre, Copper, Défaut cristallin, Crystal defects, Effet contrainte, Stress effects, Fiabilité, Reliability, Loi échelle, Scaling laws, Microélectronique, Microelectronics, Méthode élément fini, Finite element method, Rapport aspect, Aspect ratio, Résultat expérimental, Experimental result, Resultado experimental, Verre phosphosilicate, Phosphosilicate glasses, 6172Q, Microelectronic reliability, Scaling effects, Stress voiding
Document Type:
Konferenz Conference Paper
File Description:
text
Language:
English
Author Affiliations:
School of Materials Science and Engineering, Nanyang Technological University, Blk N4.1, #01-18 Nanyang Avenue, 639798, Singapore, Singapore
ISSN:
0040-6090
Access URL:
http://pascal-francis.inist.fr/vibad/index.php?action=search&terms=18511396
Rights:
Copyright 2007 INIST-CNRS
CC BY 4.0
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
Notes:
Physics of condensed state: structure, mechanical and thermal properties
Accession Number:
edscal.18511396
Database:
PASCAL Archive

Weitere Informationen

In this study, numerical work using ANSYS and analytical work based on Eshelby models were performed to examine the effect of aspect ratio scaling on the hydrostatic stress in passivated metal interconnects. Aluminium and copper interconnects passivated with phosphosilicate glass (PSG) with aspect ratios ranging from 1 x10-4 to 100 were studied. Copper interconnects in damascene structure were also studied. The results from analytical models agreed well with numerical results and relevant experimental results. The results showed a decreasing trend of hydrostatic stress with aspect ratio for narrow interconnects, and increasing trend of hydrostatic stress for wide interconnects, with a maximum hydrostatic stress at an aspect ratio of 1. It was observed that there is a large scaling effect. For example, in the case of aluminium interconnect, stress values vary between 50 MPa and 463 MPa. It was also observed from the hydrostatic stress contours that the regions of highest stress do not correspond to the void locations seen experimentally. This implies that it is insufficient to look only at hydrostatic stress for determination of failure sites. Another factor that should be examined is the stress gradient.