Result: Selective area etching of InP with CBr4 in MOVPE
Title:
Selective area etching of InP with CBr4 in MOVPE
Authors:
Source:
Thirteenth International Conference on Metal Organic Vapor Phase Epitaxy (ICMOVPE-XIII), Phoenix Seagaia Resort, Miyazaki, 22-26 May 2006Journal of crystal growth. 298:94-97
Publisher Information:
Amsterdam: Elsevier, 2007.
Publication Year:
2007
Physical Description:
print, 9 ref
Original Material:
INIST-CNRS
Subject Terms:
Crystallography, Cristallographie cristallogenèse, Geology, Géologie, Metallurgy, welding, Métallurgie, soudage, Sciences exactes et technologie, Exact sciences and technology, Physique, Physics, Domaines interdisciplinaires: science des materiaux; rheologie, Cross-disciplinary physics: materials science; rheology, Science des matériaux, Materials science, Matériaux particuliers, Specific materials, Autres semiconducteurs, Other semiconductors, Méthodes de dépôt de films et de revêtements; croissance de films et épitaxie, Methods of deposition of films and coatings; film growth and epitaxy, Théorie et modèles de la croissance de films, Theory and models of film growth, Epitaxie en phase vapeur; croissance en phase vapeur, Vapor phase epitaxy; growth from vapor phase, Sciences appliquees, Applied sciences, Electronique, Electronics, Electronique des semiconducteurs. Microélectronique. Optoélectronique. Dispositifs à l'état solide, Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices, Circuits intégrés, Integrated circuits, Conception. Technologies. Analyse fonctionnement. Essais, Design. Technologies. Operation analysis. Testing, Aire sélective, Selective area, Composé III-V, III-V compound, Compuesto III-V, Composé minéral, Inorganic compounds, Composé organométallique, Organometallic compounds, Croissance sélective, Selective growth, Dispositif optoélectronique, Optoelectronic devices, Dépendance température, Temperature dependence, Effet pression, Pressure effects, Epitaxie phase vapeur, VPE, Fabrication microélectronique, Microelectronic fabrication, Fabricación microeléctrica, Facteur réflexion, Reflectivity, Gravure sélective, Selective etching, Grabado selectivo, Indium phosphure, Indium phosphides, Microscopie force atomique, Atomic force microscopy, Mécanisme croissance, Growth mechanism, Mecanismo crecimiento, Méthode MOCVD, MOCVD, Méthode MOVPE, MOVPE method, Método MOVPE, Optoélectronique intégrée, Integrated optoelectronics, Pastille électronique, Wafers, Phase vapeur, Vapor phase, Semiconducteur III-V, III-V semiconductors, Spectre réflexion, Reflection spectrum, Espectro reflexión, Taux croissance, Growth rate, Vitesse gravure, Etching rate, Velocidad grabado, 6855A, 8105E, 8115K, InP, 81.05.Ea; 81.15.Gh, A3. Selective area etching; A3. MOCVD; A3. Selective area growth
Time:
8540
Document Type:
Conference
Conference Paper
File Description:
text
Language:
English
Author Affiliations:
Apogee Photonics Inc., 6580 Snowdrift Road, Allentown, PA 18106, United States
Aonex Technologies Inc., 129 Hill Avenue, Suite 108, Pasadena, CA 91106, United States
Aonex Technologies Inc., 129 Hill Avenue, Suite 108, Pasadena, CA 91106, United States
ISSN:
0022-0248
Rights:
Copyright 2007 INIST-CNRS
CC BY 4.0
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
CC BY 4.0
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
Notes:
Electronics
Physics and materials science
Physics and materials science
Accession Number:
edscal.18578702
Database:
PASCAL Archive
Further Information
We report on the in situ selective area etching (SAE) of InP using carbon tetrabromide (CBr4) in a metal organic vapor phase (MOVPE) reactor at different pressures and temperatures. Etch rate dependence on growth temperature from 550 to 700 °C and growth pressure from 50 to 90 Torr was evaluated. Etch rates were determined by in situ optical reflectance measurements for planar wafers. Selective area etch rate was evaluated by Dektak and atomic force microscopy (AFM) for enhanced etch rates within oxide pad areas. It is shown that pre-etching InP with CBr4 reduces the effect of excessive edge growth enhancement in selective area growth (SAG). By improving wafer planarity of SAG regrowth, CBr4 pre-etch is beneficial to the fabrication of integrated optoelectronic devices.