• Structural investigation of In...

Treffer: Structural investigation of InGaAsN films grown on pseudo-lattice-matched InGaAs substrates by metalorganic vapor phase epitaxy

Title:
Structural investigation of InGaAsN films grown on pseudo-lattice-matched InGaAs substrates by metalorganic vapor phase epitaxy
Authors:
KONGJAENG, Pornsiri, SANORPIM, Sakuntam, YAMAMOTO, Takahisa, ONO, Wataru, NAKAJIMA, Fumio, KATAYAMA, Ryuji, ONABE, Kentaro
Source:
Thirteenth International Conference on Metal Organic Vapor Phase Epitaxy (ICMOVPE-XIII), Phoenix Seagaia Resort, Miyazaki, 22-26 May 2006Journal of crystal growth. 298:111-115
Publisher Information:
Amsterdam: Elsevier, 2007.
Publication Year:
2007
Physical Description:
print, 12 ref
Original Material:
INIST-CNRS
Subject Terms:
Crystallography, Cristallographie cristallogenèse, Geology, Géologie, Metallurgy, welding, Métallurgie, soudage, Sciences exactes et technologie, Exact sciences and technology, Physique, Physics, Etat condense: structure, proprietes mecaniques et thermiques, Condensed matter: structure, mechanical and thermal properties, Structure des liquides et des solides; cristallographie, Structure of solids and liquids; crystallography, Défauts et impuretés dans les cristaux; microstructure, Defects and impurities in crystals; microstructure, Défauts linéaires: dislocations, disinclinaisons, Linear defects: dislocations, disclinations, Domaines interdisciplinaires: science des materiaux; rheologie, Cross-disciplinary physics: materials science; rheology, Science des matériaux, Materials science, Matériaux particuliers, Specific materials, Autres semiconducteurs, Other semiconductors, Méthodes de dépôt de films et de revêtements; croissance de films et épitaxie, Methods of deposition of films and coatings; film growth and epitaxy, Théorie et modèles de la croissance de films, Theory and models of film growth, Epitaxie en phase vapeur; croissance en phase vapeur, Vapor phase epitaxy; growth from vapor phase, Bande interdite, Energy gap, Cellule solaire, Solar cells, Composé minéral, Inorganic compounds, Couche mince, Thin films, Dislocation interfaciale, Misfit dislocations, Epitaxie phase vapeur, VPE, Film optique, Optical films, Gallium arséniure, Gallium arsenides, Indium arséniure, Indium arsenides, Microscopie électronique transmission, Transmission electron microscopy, Mécanisme croissance, Growth mechanism, Mecanismo crecimiento, Méthode MOVPE, MOVPE method, Método MOVPE, Semiconducteur III-V, III-V semiconductors, 6172L, 6855A, 8105E, 8115K, InGaAs, InGaAsN, InxGa1-xAs, Substrat GaAs, 61.72.Ff; 68.37.Lp; 78.66.Fd; 81.15.Kk, A1. Transmission electron microscopy; A3. Metalorganic vapor-phase epitaxy; B2. InGaASN; B2. InGaAs pseudo-lattice-matched substrate; B3. Multijunction (MJ) solar cells
Document Type:
Konferenz Conference Paper
File Description:
text
Language:
English
Author Affiliations:
Department ofPhysics, Faculty of Science, Chulalongkorn University, Pathumwan, Bangkok 10330, Thailand
Department of Advanced Materials Science, The University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa 277-8561, Japan
ISSN:
0022-0248
Access URL:
http://pascal-francis.inist.fr/vibad/index.php?action=search&terms=18578706
Rights:
Copyright 2007 INIST-CNRS
CC BY 4.0
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
Notes:
Physics and materials science

Physics of condensed state: structure, mechanical and thermal properties
Accession Number:
edscal.18578706
Database:
PASCAL Archive

Weitere Informationen

The use of the nearly lattice-matched InxGa1-xAs pseudo-substrate has been explored for the growth of InxGa1-xAs1-yNy with higher In (x) contents by metalorganic vapor phase epitaxy (MOVPE). As compared with the quality of high In-containing In0.3Ga0.7As0.98N0.02 films grown directly on GaAs substrates, the growth on In0.2Ga0.8As pseudo-lattice-matched substrates yielded good structural quality films. The number of misfit dislocations investigated by cross-sectional transmission electron microscopy was found to be reduced in the InGaAsN grown layer. Furthermore, higher optical quality In0.3Ga0.7As0.98N0.02 films with the bandgap of 1.01 eV were grown on the In0.2Ga0.8As pseudo-lattice-matched substrate. This study shows that the use of the InxGa1-xAS pseudo-lattice-matched substrate is an effective method to fabricate a thick lattice-matched InGaAsN layers with higher optical and structural qualities necessary for the development of the multijunction (MJ) solar cells.