• Structural and optical propert...

Treffer: Structural and optical properties of near-UV LEDs grown on V-grooved sapphire substrates fabricated by wet etching

Title:
Structural and optical properties of near-UV LEDs grown on V-grooved sapphire substrates fabricated by wet etching
Authors:
CHEONG, H. S, NA, M. G, CHOI, Y. J, CUONG, T. V, HONG, C.-H, SUH, E.-K, KONG, B. H, CHO, H. K
Source:
Thirteenth International Conference on Metal Organic Vapor Phase Epitaxy (ICMOVPE-XIII), Phoenix Seagaia Resort, Miyazaki, 22-26 May 2006Journal of crystal growth. 298:699-702
Publisher Information:
Amsterdam: Elsevier, 2007.
Publication Year:
2007
Physical Description:
print, 9 ref
Original Material:
INIST-CNRS
Subject Terms:
Crystallography, Cristallographie cristallogenèse, Geology, Géologie, Metallurgy, welding, Métallurgie, soudage, Sciences exactes et technologie, Exact sciences and technology, Physique, Physics, Etat condense: structure electronique, proprietes electriques, magnetiques et optiques, Condensed matter: electronic structure, electrical, magnetic, and optical properties, Propriétés optiques, spectroscopie et autres interactions de la matière condensée avec les particules et le rayonnement, Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation, Propriétés optiques des couches minces, Optical properties of specific thin films, Sciences appliquees, Applied sciences, Electronique, Electronics, Electronique des semiconducteurs. Microélectronique. Optoélectronique. Dispositifs à l'état solide, Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices, Circuits intégrés, Integrated circuits, Conception. Technologies. Analyse fonctionnement. Essais, Design. Technologies. Operation analysis. Testing, Dispositifs optoélectroniques, Optoelectronic devices, Fabrication microélectronique (technologie des matériaux et des surfaces), Microelectronic fabrication (materials and surfaces technology), Composé III-V, III-V compound, Compuesto III-V, Composé minéral, Inorganic compounds, Couche épitaxique, Epitaxial layers, Densité dislocation, Dislocation density, Diode électroluminescente, Light emitting diodes, Dispositif optoélectronique, Optoelectronic devices, Défaut croissance, Growth defect, Defecto crecimiento, Dépendance température, Temperature dependence, Dépôt phase vapeur, Vapor deposition, Epitaxie, Epitaxy, Fabrication microélectronique, Microelectronic fabrication, Fabricación microeléctrica, Gallium nitrure, Gallium nitrides, Gravure, Etching, Indium nitrure, Indium nitrides, Mécanisme croissance, Growth mechanism, Mecanismo crecimiento, Méthode MOCVD, MOCVD, Photoluminescence, Procédé voie humide, Wet process, Procedimiento vía húmeda, Propriété optique, Optical properties, Puissance sortie, Output power, Potencia salida, Rendement quantique, Quantum yield, Réaction dirigée, Template reaction, Reacción dirigida, Semiconducteur III-V, III-V semiconductors, Silicium oxyde, Silicon oxides, Simulation numérique, Digital simulation, 8540H, 8560J, Dislocation filetée, Threading dislocation, GaN, InGaN, SiO2, Substrat saphir, 85.60.Jb; 81.05.Ea; 81.15.Gh; 81.65.Cf; 61.72.Ff, Al. Dislocation; Al. Patterned substrate; Al. Wet etching; A3. Metalorganic chemical vapor deposition; Bl. InGaN; B3. Light emitting diode
Time:
7866, 8540
Document Type:
Konferenz Conference Paper
File Description:
text
Language:
English
Author Affiliations:
Semiconductor Physics Research Center/Department of Semiconductor Science and Technology, Chonbuk National University, Dukjin-dong, Dukjin-gu, Chonju, Chonbuk 561-756, Korea, Republic of
School of Advanced Materials Science and Engineering, Sungkyunkwan University, Cheoncheon-dong 300, Jangan-gu, Suwon, Gyeonggi-do, 440-746, Korea, Republic of
ISSN:
0022-0248
Access URL:
http://pascal-francis.inist.fr/vibad/index.php?action=search&terms=18578843
Rights:
Copyright 2007 INIST-CNRS
CC BY 4.0
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
Notes:
Electronics

Physics of condensed state: electronic structure, electrical, magnetic and optical properties
Accession Number:
edscal.18578843
Database:
PASCAL Archive

Weitere Informationen

V-grooved sapphire substrates (VGSS) were fabricated by a simple wet etching process with SiO2 stripe masks along <1120> orientation of the sapphire substrate and a mixed solution of H2SO4 and H3PO4. The growth of low-defect GaN template was optimized by two-step growth technique of metalorganic vapor deposition (MOCVD), resulting in the threading dislocation (TD) density of 2-4 x 107 cm-2 in the entire region of the GaN template. The epitaxial structure of near-UV light emitting diode (LED) was grown on the GaN templates on both the VGSS and the flat sapphire substrate (FSS) in order to compare the characteristics of their structural and optical properties. The internal quantum efficiency and the extraction efficiency of the LED structure grown on the VGSS were remarkably increased when compared to the conventional LED structure grown on the FSS. It seems to be attributed to the reduction in the TD density of the GaN template on the VGSS and the decrease in the number of times of total internal reflections of the light flux due to the V-grooved pattern, respectively. The increase in optical output power of the LED grown on the VGSS agreed well with the expected value based on the simulation of the commercial Light Tool program and temperature-dependent photoluminescence (PL) intensities.