Treffer: The effect of high temperature on the optical properties of InGaN/GaN blue light-emitting diodes with multiquantum barriers
Title:
The effect of high temperature on the optical properties of InGaN/GaN blue light-emitting diodes with multiquantum barriers
Authors:
Source:
Thirteenth International Conference on Metal Organic Vapor Phase Epitaxy (ICMOVPE-XIII), Phoenix Seagaia Resort, Miyazaki, 22-26 May 2006Journal of crystal growth. 298:714-718
Publisher Information:
Amsterdam: Elsevier, 2007.
Publication Year:
2007
Physical Description:
print, 22 ref
Original Material:
INIST-CNRS
Subject Terms:
Crystallography, Cristallographie cristallogenèse, Geology, Géologie, Metallurgy, welding, Métallurgie, soudage, Sciences exactes et technologie, Exact sciences and technology, Physique, Physics, Etat condense: structure electronique, proprietes electriques, magnetiques et optiques, Condensed matter: electronic structure, electrical, magnetic, and optical properties, Propriétés optiques, spectroscopie et autres interactions de la matière condensée avec les particules et le rayonnement, Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation, Propriétés optiques des couches minces, Optical properties of specific thin films, Domaines interdisciplinaires: science des materiaux; rheologie, Cross-disciplinary physics: materials science; rheology, Science des matériaux, Materials science, Matériaux particuliers, Specific materials, Autres semiconducteurs, Other semiconductors, Nanomatériaux et nanostructures : fabrication et caractèrisation, Nanoscale materials and structures: fabrication and characterization, Puits quantiques, Quantum wells, Sciences appliquees, Applied sciences, Electronique, Electronics, Electronique des semiconducteurs. Microélectronique. Optoélectronique. Dispositifs à l'état solide, Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices, Dispositifs optoélectroniques, Optoelectronic devices, Composé III-V, III-V compound, Compuesto III-V, Composé minéral, Inorganic compounds, Coupe transversale, Cross section, Corte transverso, Diode électroluminescente, Light emitting diodes, Dispositif optoélectronique, Optoelectronic devices, Dépendance température, Temperature dependence, Effet température, Temperature effects, Electroluminescence, Gallium nitrure, Gallium nitrides, Hétérostructure, Heterostructures, Indium nitrure, Indium nitrides, Propriété optique, Optical properties, Puits quantique multiple, Multiple quantum well, Pozo cuántico múltiple, Semiconducteur III-V, III-V semiconductors, Trempe, Quenching, 8105E, 8560J, GaN, InGaN, A3. Multiple quantum well, A3. Multiquantum barrier, Al. Excitation cross sections, B3. Light-emitting diodes
Time:
7866, 8560
Document Type:
Konferenz
Conference Paper
File Description:
text
Language:
English
Author Affiliations:
Department of Electronic Engineering, Chang Gung University, 259 Wen-Hwa 1st Road, Kwei-Shan, Tao-Yuan, Tawain, Province of China
ISSN:
0022-0248
Rights:
Copyright 2007 INIST-CNRS
CC BY 4.0
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
CC BY 4.0
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
Notes:
Electronics
Physics and materials science
Physics of condensed state: electronic structure, electrical, magnetic and optical properties
Physics and materials science
Physics of condensed state: electronic structure, electrical, magnetic and optical properties
Accession Number:
edscal.18578847
Database:
PASCAL Archive
Weitere Informationen
The effect of the temperature on the characteristics of InGaN/GaN multiple quantum well (MQW) light-emitting diodes (LEDs) with multiquantum barriers (MQBs) has been investigated in-depth over a broad range of temperatures from 200 to 370 K. It was found that if the device had an MQB structure it exhibited stronger blue emission as well as had a larger capture cross-section fraction than did the conventional MQW LEDs. This was due to the MQB configuration, which offered a large contribution to the exciton recombination; the adoption of an appropriate heterobarrier allows the achievement of improved LED performance. However, the unavoidable disordering formed in the In-rich MQB heterostructures caused not only EL intensity deterioration, but also rapid quenching rate at temperatures above 300 K.