Result: The origins of double emission peaks in electroluminescence spectrum from InGaN/GaN MQW LED
Title:
The origins of double emission peaks in electroluminescence spectrum from InGaN/GaN MQW LED
Authors:
Source:
Thirteenth International Conference on Metal Organic Vapor Phase Epitaxy (ICMOVPE-XIII), Phoenix Seagaia Resort, Miyazaki, 22-26 May 2006Journal of crystal growth. 298:731-735
Publisher Information:
Amsterdam: Elsevier, 2007.
Publication Year:
2007
Physical Description:
print, 17 ref
Original Material:
INIST-CNRS
Subject Terms:
Crystallography, Cristallographie cristallogenèse, Geology, Géologie, Metallurgy, welding, Métallurgie, soudage, Sciences exactes et technologie, Exact sciences and technology, Physique, Physics, Etat condense: structure electronique, proprietes electriques, magnetiques et optiques, Condensed matter: electronic structure, electrical, magnetic, and optical properties, Propriétés optiques, spectroscopie et autres interactions de la matière condensée avec les particules et le rayonnement, Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation, Autres spectres de luminescence et recombinaison radiative, Other luminescence and radiative recombination, Electroluminescence, Domaines interdisciplinaires: science des materiaux; rheologie, Cross-disciplinary physics: materials science; rheology, Science des matériaux, Materials science, Matériaux particuliers, Specific materials, Autres semiconducteurs, Other semiconductors, Nanomatériaux et nanostructures : fabrication et caractèrisation, Nanoscale materials and structures: fabrication and characterization, Puits quantiques, Quantum wells, Sciences appliquees, Applied sciences, Electronique, Electronics, Electronique des semiconducteurs. Microélectronique. Optoélectronique. Dispositifs à l'état solide, Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices, Dispositifs optoélectroniques, Optoelectronic devices, Cathodoluminescence, Composé III-V, III-V compound, Compuesto III-V, Composé minéral, Inorganic compounds, Diffraction RX, XRD, Diode électroluminescente, Light emitting diodes, Dispositif optoélectronique, Optoelectronic devices, Electroluminescence, Gallium nitrure, Gallium nitrides, Indium nitrure, Indium nitrides, Matériau piézoélectrique, Piezoelectric materials, Microscopie optique, Optical microscopy, Méthode MOCVD, MOCVD, Nanomatériau, Nanostructured materials, Nitrure, Nitrides, Pastille électronique, Wafers, Point quantique, Quantum dots, Puits quantique multiple, Multiple quantum well, Pozo cuántico múltiple, RBS, Rétrodiffusion, Backscattering, Semiconducteur III-V, III-V semiconductors, 7860F, 8105E, 8107S, 8560J, GaN, InGaN, 78.60.Fi; 78.60.Hk; 78.67.De; 78.67.Hc, Al. Optical microscopy; A3. Metalorganic chemical vapor deposition; B1. Nitrides; B2. Semiconducting III-V materials; B3. Light emitting diodes
Document Type:
Conference
Conference Paper
File Description:
text
Language:
English
Author Affiliations:
State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China
ISSN:
0022-0248
Rights:
Copyright 2007 INIST-CNRS
CC BY 4.0
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
CC BY 4.0
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
Notes:
Electronics
Physics and materials science
Physics of condensed state: electronic structure, electrical, magnetic and optical properties
Physics and materials science
Physics of condensed state: electronic structure, electrical, magnetic and optical properties
Accession Number:
edscal.18578851
Database:
PASCAL Archive
Further Information
In this work, InGaN/GaN multiple quantum well (MQW) light emitting diodes (LEDs) wafer with two emission peaks were grown by metalorganic chemical vapor deposition (MOCVD). X-ray diffraction (XRD), Ruthford backscattering (RBS), cathodoluminescence (CL), electroluminescence (EL) and emission microscope (EM) measurements were performed to study the recombination mechanism of InGaN QWs. The green spots and blue floccules in EM images were assigned to In-rich quantum dots (QDs) and modified QW by piezoelectric field. The wavelengths for both blue and green emissions do not shift until the injection level reach to 2 x 104 mA/cm2. In CL images, the modified QWs assigned by EM and EL have a broad band tail expanding to 526 nm.