Result: The effect of InGaN/GaN MQW hydrogen treatment and threading dislocation optimization on GaN LED efficiency
Title:
The effect of InGaN/GaN MQW hydrogen treatment and threading dislocation optimization on GaN LED efficiency
Authors:
Source:
Thirteenth International Conference on Metal Organic Vapor Phase Epitaxy (ICMOVPE-XIII), Phoenix Seagaia Resort, Miyazaki, 22-26 May 2006Journal of crystal growth. 298:740-743
Publisher Information:
Amsterdam: Elsevier, 2007.
Publication Year:
2007
Physical Description:
print, 10 ref
Original Material:
INIST-CNRS
Subject Terms:
Crystallography, Cristallographie cristallogenèse, Geology, Géologie, Metallurgy, welding, Métallurgie, soudage, Sciences exactes et technologie, Exact sciences and technology, Physique, Physics, Etat condense: structure, proprietes mecaniques et thermiques, Condensed matter: structure, mechanical and thermal properties, Structure des liquides et des solides; cristallographie, Structure of solids and liquids; crystallography, Défauts et impuretés dans les cristaux; microstructure, Defects and impurities in crystals; microstructure, Défauts linéaires: dislocations, disinclinaisons, Linear defects: dislocations, disclinations, Domaines interdisciplinaires: science des materiaux; rheologie, Cross-disciplinary physics: materials science; rheology, Science des matériaux, Materials science, Matériaux particuliers, Specific materials, Autres semiconducteurs, Other semiconductors, Nanomatériaux et nanostructures : fabrication et caractèrisation, Nanoscale materials and structures: fabrication and characterization, Puits quantiques, Quantum wells, Sciences appliquees, Applied sciences, Electronique, Electronics, Electronique des semiconducteurs. Microélectronique. Optoélectronique. Dispositifs à l'état solide, Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices, Dispositifs optoélectroniques, Optoelectronic devices, Composé III-V, III-V compound, Compuesto III-V, Composé minéral, Inorganic compounds, Densité courant, Current density, Densité élevée, High density, Densidad elevada, Diode électroluminescente, Light emitting diodes, Dispositif optoélectronique, Optoelectronic devices, Déplacement raie, Spectral line shift, Electroluminescence, Etat surface, Surface states, Gallium nitrure, Gallium nitrides, Indium nitrure, Indium nitrides, Morphologie surface, Surface morphology, Méthode MOCVD, MOCVD, Nanomatériau, Nanostructured materials, Optimisation, Optimization, Puits quantique multiple, Multiple quantum well, Pozo cuántico múltiple, Puits quantique, Quantum wells, Relaxation, Semiconducteur III-V, III-V semiconductors, 6172L, 8105E, 8107S, 8560J, Dislocation filetée, Threading dislocation, GaN, InGaN, 73.21.Fg; 78.55.Cr; 78.60.Fi; 85.60.Jb, A3. Metalorganic chemical vapor deposition; Bl. InGaN; Bl. Quantum wells; B3. Light-emitting diodes
Document Type:
Conference
Conference Paper
File Description:
text
Language:
English
Author Affiliations:
Optoelectronics Laboratory, Helsinki University of Technology, 02150, Finland
A. F. Ioffe Physico-Technical Institute, Russian Academy of Science, 194021 St. Petersburg, Russian Federation
OptoGaN Oy, Tietotie 3, 02150 Espoo, Finland
A. F. Ioffe Physico-Technical Institute, Russian Academy of Science, 194021 St. Petersburg, Russian Federation
OptoGaN Oy, Tietotie 3, 02150 Espoo, Finland
ISSN:
0022-0248
Rights:
Copyright 2007 INIST-CNRS
CC BY 4.0
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
CC BY 4.0
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
Notes:
Electronics
Physics and materials science
Physics of condensed state: structure, mechanical and thermal properties
Physics and materials science
Physics of condensed state: structure, mechanical and thermal properties
Accession Number:
edscal.18578853
Database:
PASCAL Archive
Further Information
We report on the effect of GaN buffer threading dislocation (TD) optimization and InGaN/GaN quantum well (QW) hydrogen (H2) treatment on the efficiency of GaN light emitting diodes (LEDs) operating in the spectral range from 400 to 500 nm. A tenfold reduction of the TD density in the GaN buffer increased the efficiency of blue LEDs operating at high current density, while in green LEDs it had very little effect. The reduced TD density also increased the compressive strain in the InGaN QWs, and caused blue shift to the electroluminescence (EL) peak wavelength. The H2 treatment of the QWs increased strain inside the MQW stack. It was possible to apply the H2 treatment only to UV LEDs, as the increased strain in blue and green LEDs caused relaxation of the MQW stack. Although this resulted in smooth surface morphology of the MQW stack, it did not lead to any increase in the efficiency of the UV LEDs.