Treffer: On the development of high-efficiency thin-film GaAs and GaInP2 cells
Title:
On the development of high-efficiency thin-film GaAs and GaInP2 cells
Authors:
Source:
Thirteenth International Conference on Metal Organic Vapor Phase Epitaxy (ICMOVPE-XIII), Phoenix Seagaia Resort, Miyazaki, 22-26 May 2006Journal of crystal growth. 298:772-776
Publisher Information:
Amsterdam: Elsevier, 2007.
Publication Year:
2007
Physical Description:
print, 13 ref
Original Material:
INIST-CNRS
Subject Terms:
Crystallography, Cristallographie cristallogenèse, Geology, Géologie, Metallurgy, welding, Métallurgie, soudage, Sciences exactes et technologie, Exact sciences and technology, Physique, Physics, Etat condense: structure electronique, proprietes electriques, magnetiques et optiques, Condensed matter: electronic structure, electrical, magnetic, and optical properties, Structure électronique et propriétés électriques des surfaces, interfaces, couches minces et structures de basse dimensionnalité, Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures, Conductivité de surface et phénomènes de porteurs en surface, Surface conductivity and carrier phenomena, Domaines interdisciplinaires: science des materiaux; rheologie, Cross-disciplinary physics: materials science; rheology, Science des matériaux, Materials science, Matériaux particuliers, Specific materials, Autres semiconducteurs, Other semiconductors, Méthodes de dépôt de films et de revêtements; croissance de films et épitaxie, Methods of deposition of films and coatings; film growth and epitaxy, Dépôt chimique en phase vapeur (incluant le cvd activé par plasma, mocvd, etc.), Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.), Sciences appliquees, Applied sciences, Electronique, Electronics, Electronique des semiconducteurs. Microélectronique. Optoélectronique. Dispositifs à l'état solide, Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices, Circuits intégrés, Integrated circuits, Conception. Technologies. Analyse fonctionnement. Essais, Design. Technologies. Operation analysis. Testing, Addition arsenic, Arsenic additions, Cellule solaire, Solar cells, Composé III-V, III-V compound, Compuesto III-V, Composé minéral, Inorganic compounds, Couche mince, Thin films, Densité porteur charge, Carrier density, Dopage, Doping, Fabrication microélectronique, Microelectronic fabrication, Fabricación microeléctrica, Gallium arséniure, Gallium arsenides, Gallium composé, Gallium compounds, Gravure, Etching, Méthode MOCVD, MOCVD, Optimisation, Optimization, Semiconducteur III-V, III-V semiconductors, Structure cellulaire, Cellular structure, 8105E, 8115G, 8540H, GaAs, Substrat GaAs, 71.55.Eq; 73.61.-r; 81.15.Gh; 82.45.Mp; 84.60.Jd, Al. Doping; Al. Etching; A3. Metalorganic chemical vapor deposition; Bl. Gallium Compounds; B2. Semiconducting III-V materials; B3. Solar cells
Time:
8540
Document Type:
Konferenz
Conference Paper
File Description:
text
Language:
English
Author Affiliations:
Applied Materials Science, IMM, Radboud University Nijmegen, Toernooiveld 1, 6525 ED Nijmegen, Netherlands
ISSN:
0022-0248
Rights:
Copyright 2007 INIST-CNRS
CC BY 4.0
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
CC BY 4.0
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
Notes:
Electronics
Physics and materials science
Physics of condensed state: electronic structure, electrical, magnetic and optical properties
Physics and materials science
Physics of condensed state: electronic structure, electrical, magnetic and optical properties
Accession Number:
edscal.18578860
Database:
PASCAL Archive
Weitere Informationen
This work presents an overview of recent results obtained in the field of III-V solar cell research as performed at the Radboud University Nijmegen. An n-type AlxGa1-xInP2 window layer with x = 1 was found to give the highest GaAs cell performance, in spite of a low doping carrier concentration as compared to GaInP2. As a result of the optimization of the GaAs cell structure obtained by metalorganic chemical vapor deposition (MOCVD) and subsequent processing, thin-film cells transferred from their native GaAs substrate to a foreign carrier, were achieved with a conversion efficiency of 24.5%. This is a world record for single-junction thin-film cells. Difficulties in the processing of thin-film GaInP2 cells, due to anomalous etching behavior of these layers in HCl, have been overcome by using a HBr/Br2/H2O mixture as an etchant. Thin-film GaInP2 cells with efficiencies up to 11.4% were obtained.