• Scanning spreading resistance...

Treffer: Scanning spreading resistance microscopy of defect engineered low dose SIMOX samples

Title:
Scanning spreading resistance microscopy of defect engineered low dose SIMOX samples
Authors:
VINES, Lasse, KÖGLER, Reinhard, KUZNETSOV, Andrej Yu
Source:
Nanoscale imaging and metrology of devices and innovative materials. Proceedings of the European Materials Research Society 2006 - Symposium F, EMRS volume 195, Nice, France, 29 May - 2 June 2006Microelectronic engineering. 84(3):547-550
Publisher Information:
Amsterdam: Elsevier Science, 2007.
Publication Year:
2007
Physical Description:
print, 13 ref
Original Material:
INIST-CNRS
Subject Terms:
Electronics, Electronique, Sciences exactes et technologie, Exact sciences and technology, Sciences appliquees, Applied sciences, Electronique, Electronics, Electronique des semiconducteurs. Microélectronique. Optoélectronique. Dispositifs à l'état solide, Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices, Circuits intégrés, Integrated circuits, Conception. Technologies. Analyse fonctionnement. Essais, Design. Technologies. Operation analysis. Testing, Fabrication microélectronique (technologie des matériaux et des surfaces), Microelectronic fabrication (materials and surfaces technology), Cinétique réaction, Reaction kinetics, Circuit intégré, Integrated circuit, Circuito integrado, Couche enterrée, Buried layer, Capa enterrada, Couche oxyde, Oxide layer, Capa óxido, Fabrication microélectronique, Microelectronic fabrication, Fabricación microeléctrica, Formation défaut, Defect formation, Formación defecto, Implantation ion, Ion implantation, Implantación ión, Microscope balayage, Scanning microscope, Microscopio barrido, Oxydation, Oxidation, Oxidación, Résistance étalement, Spreading resistance, Resistencia ensanchamiento, Technologie SIMOX, SIMOX technology, Tecnología SIMOX, Technologie silicium sur isolant, Silicon on insulator technology, Tecnología silicio sobre aislante, Buried-oxide-layer, Defect-engineering, Ion-implantation, SIMOX, Scanning-spreading-resistance-microscopy, Silicon
Document Type:
Konferenz Conference Paper
File Description:
text
Language:
English
Author Affiliations:
University of Oslo, Department of Physics, Centre for Materials Science and Nanotechnology, P.O. Box 1048, Blindern, 0316 Oslo, Norway
Forschungszentrum Rossendorf e. V., P.O. Box 510119, 01314 Dresden, Germany
ISSN:
0167-9317
Access URL:
http://pascal-francis.inist.fr/vibad/index.php?action=search&terms=18604393
Rights:
Copyright 2007 INIST-CNRS
CC BY 4.0
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
Notes:
Electronics
Accession Number:
edscal.18604393
Database:
PASCAL Archive

Weitere Informationen

Modification of SiO2 precipitate formation by defect engineering of SIMOX (separation by implanted oxygen) process was studied using cross section scanning spreading resistance microscopy (SSRM). Firstly, open volume defects, nanocavities, have been introduced by He+ ion implantation in the region, where SiO2 precipitates were subsequently formed. Secondly, dual (simultaneous) oxygen (O+) and silicon (Si+) implantation was used to modify SiO2 reaction kinetics too. The results show that the He-induced nanocavities enhance the SiO2 formation presumably releasing excess strain associated with Si oxidation, while the use of a dual O+/Si+ beam do not influence significantly the oxidation kinetics in the initial state of the SIMOX process in our samples. Overall, SSRM was shown to be a suitable method for observation of the early stage of buried oxide formation in Si, since it measures the local resistivity, the main functional parameter of a SIMOX structure.