Treffer: InP-based IC technologies
Title:
InP-based IC technologies
Authors:
Source:
Proceedings of the Third International Conference on Materials for Advanced Technologies (ICMAT 2005) Symposium J: III-V Semiconductors for Microelectronic and Optoelectronic Applications, Singapore, July 3-8, 2005Thin solid films. 515(10):4313-4320
Publisher Information:
Lausanne: Elsevier Science, 2007.
Publication Year:
2007
Physical Description:
print, 34 ref
Original Material:
INIST-CNRS
Subject Terms:
Crystallography, Cristallographie cristallogenèse, Electronics, Electronique, Metallurgy, welding, Métallurgie, soudage, Condensed state physics, Physique de l'état condensé, Sciences exactes et technologie, Exact sciences and technology, Sciences appliquees, Applied sciences, Electronique, Electronics, Electronique des semiconducteurs. Microélectronique. Optoélectronique. Dispositifs à l'état solide, Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices, Circuits intégrés, Integrated circuits, Conception. Technologies. Analyse fonctionnement. Essais, Design. Technologies. Operation analysis. Testing, Fabrication microélectronique (technologie des matériaux et des surfaces), Microelectronic fabrication (materials and surfaces technology), Circuit intégré, Integrated circuit, Circuito integrado, Composé minéral, Inorganic compound, Compuesto inorgánico, Fabrication microélectronique, Microelectronic fabrication, Fabricación microeléctrica, Fibre optique, Optical fiber, Fibra óptica, Indium phosphure, Indium phosphide, Indio fosfuro, Recherche développement, Research and development, Investigación desarrollo, Semiconducteur III-V, III-V semiconductors, Système optique, Optical system, Sistema óptico, 8540H, InP, Electronic devices, Semiconductors
Time:
8540
Document Type:
Konferenz
Conference Paper
File Description:
text
Language:
English
Author Affiliations:
NTT Photonics Laboratories, NTT Corporation, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa, 243-0198, Japan
ISSN:
0040-6090
Rights:
Copyright 2007 INIST-CNRS
CC BY 4.0
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
CC BY 4.0
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
Notes:
Electronics
Accession Number:
edscal.18618616
Database:
PASCAL Archive
Weitere Informationen
The research and development of InP-based devices and integrated circuits (ICs) are driven by applications in broadband optical-fiber communications systems and microwave and millimeter-wave wireless systems. This paper describes recent progress on our InP-based device and IC technologies for 40-Gbit/s optical fiber communications and 10-Gbit/s class millimeter-wave wireless links. Device performance requirements for future 100-Gbit/s class ICs are then discussed along with our device technology roadmap. We also describe our latest 100-Gbit/s class optical fiber communication IC results.