Result: Parametric investigation of laser diode bonding using eutectic AuSn solder

Title:
Parametric investigation of laser diode bonding using eutectic AuSn solder
Authors:
TEO, J. W. Ronnie, LI, G. Y, LING, M. S, WANG, Z. F, SHI, X. Q
Source:
Proceedings of the Third International Conference on Materials for Advanced Technologies (ICMAT 2005) Symposium J: III-V Semiconductors for Microelectronic and Optoelectronic Applications, Singapore, July 3-8, 2005Thin solid films. 515(10):4340-4343
Publisher Information:
Lausanne: Elsevier Science, 2007.
Publication Year:
2007
Physical Description:
print, 13 ref
Original Material:
INIST-CNRS
Subject Terms:
Crystallography, Cristallographie cristallogenèse, Electronics, Electronique, Metallurgy, welding, Métallurgie, soudage, Condensed state physics, Physique de l'état condensé, Sciences exactes et technologie, Exact sciences and technology, Sciences appliquees, Applied sciences, Electronique, Electronics, Electronique des semiconducteurs. Microélectronique. Optoélectronique. Dispositifs à l'état solide, Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices, Circuits intégrés, Integrated circuits, Conception. Technologies. Analyse fonctionnement. Essais, Design. Technologies. Operation analysis. Testing, Fabrication microélectronique (technologie des matériaux et des surfaces), Microelectronic fabrication (materials and surfaces technology), Assemblage brasage tendre, Soldered joint, Junta soldada, Etain alliage, Tin alloy, Estaño aleación, Eutectique, Eutectic, Eutéctico, Fabrication microélectronique, Microelectronic fabrication, Fabricación microeléctrica, Laser injection, Injection laser, Laser inyección, Laser semiconducteur, Semiconductor laser, Laser semiconductor, Liaison chimique, Chemical bond, Enlace químico, Métal fondu brasage tendre, Solder metal, Metal fundido soldeo blando, Or alliage, Gold alloy, Oro aleación, Rendement quantique, Quantum yield, Rendimiento quántico, 8540H, Bonding comparison, Electro-optical, Laser diode
Time:
8540
Document Type:
Conference Conference Paper
File Description:
text
Language:
English
Author Affiliations:
School of Materials Engineering, Nanyang Technological University, Singapore 639798, Singapore
Singapore Institute of Manufacturing Technology, Nanyang Drive, Singapore 638075, Singapore
ISSN:
0040-6090
Access URL:
http://pascal-francis.inist.fr/vibad/index.php?action=search&terms=18618620
Rights:
Copyright 2007 INIST-CNRS
CC BY 4.0
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
Notes:
Electronics
Accession Number:
edscal.18618620
Database:
PASCAL Archive

Further Information

Based on an optimized bonding technique for semiconductor lasers, parametric investigations of different bonding configurations were performed using AuSn solder. No abrupt electrical degradation was observed for both face-up and face-down bonding configurations. The typical optical output achieved for face-up and face-down bonding approach was about 100 mW/facet and 150 mW/facet, respectively. Face-up bonded LDs exhibited a steady differential quantum efficiency ηD of ∼ 0.425 mW/mA before gradual degradation at 200 mA, while face-down bonded LDs improved its performance beyond 350 mA. The characteristic temperature To also improved to as much as 643 K for face-down bonded LDs. Spectrally-resolved emission measurement showed that the temperature rise in unbonded, face-up bonded and face-down bonded LDs were approximately 11, 7-8 and 2-3 °C, respectively. These investigations showed that the improved performances for face-down bonding approach compared to face-up approach were due to better thermal management.