Treffer: Nanowhiskers formation by radio frequency Ar/O2 plasma etching of aluminum coated diamond films

Title:
Nanowhiskers formation by radio frequency Ar/O2 plasma etching of aluminum coated diamond films
Authors:
LI, C. Y, HATTA, A
Source:
Proceedings of the 18th Symposium on Plasma Science for Materials (SPSM-18), Tokyo, Japan, June 28-29, 2005Thin solid films. 515(9):4172-4176
Publisher Information:
Lausanne: Elsevier Science, 2007.
Publication Year:
2007
Physical Description:
print, 16 ref
Original Material:
INIST-CNRS
Subject Terms:
Crystallography, Cristallographie cristallogenèse, Electronics, Electronique, Metallurgy, welding, Métallurgie, soudage, Condensed state physics, Physique de l'état condensé, Sciences exactes et technologie, Exact sciences and technology, Physique, Physics, Physique des gaz, des plasmas et des decharges electriques, Physics of gases, plasmas and electric discharges, Physique des plasmas et décharges électriques, Physics of plasmas and electric discharges, Applications des plasmas, Plasma applications, Gravure et nettoyage, Etching and cleaning, Domaines interdisciplinaires: science des materiaux; rheologie, Cross-disciplinary physics: materials science; rheology, Science des matériaux, Materials science, Matériaux particuliers, Specific materials, Fullerènes et matériaux apparentés; diamants, graphite, Fullerenes and related materials; diamonds, graphite, Sciences appliquees, Applied sciences, Electronique, Electronics, Electronique des semiconducteurs. Microélectronique. Optoélectronique. Dispositifs à l'état solide, Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices, Circuits intégrés, Integrated circuits, Conception. Technologies. Analyse fonctionnement. Essais, Design. Technologies. Operation analysis. Testing, Fabrication microélectronique (technologie des matériaux et des surfaces), Microelectronic fabrication (materials and surfaces technology), Aluminium, Anisotropie, Anisotropy, Couche mince, Thin films, Diamant synthétique, Synthetic diamond, Diamante sintético, Décharge haute fréquence, High-frequency discharges, Fabrication microélectronique, Microelectronic fabrication, Fabricación microeléctrica, Gravure plasma, Plasma etching, Grabado plasma, Particule enrobée, Coated particle, Partícula envuelta, Revêtement, Coatings, Trichite, Whiskers, Vitesse gravure, Etching rate, Velocidad grabado, 5277B, 8105U, 8540H, Nanotrichite, Nanowhisker, Spectrométrie RX dispersive, Energy-dispersive X-ray spectrometry, Al coating, Anisotropic etching, Diamond nanowhiskers, RF plasma
Time:
8540
Document Type:
Konferenz Conference Paper
File Description:
text
Language:
English
Author Affiliations:
Department of Electronic and Photonic Systems Engineering, Kochi University of Technology, 185 Miyanokuchi, Tosayamada-cho, Kami-gun, Kochi 782-8502, Japan
Department of Physics, School of Science, Harbin Engineering University, Harbin 150001, China
ISSN:
0040-6090
Access URL:
http://pascal-francis.inist.fr/vibad/index.php?action=search&terms=18618757
Rights:
Copyright 2007 INIST-CNRS
CC BY 4.0
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
Notes:
Electronics

Physics and materials science

Physics of gases, plasmas and electric discharges
Accession Number:
edscal.18618757
Database:
PASCAL Archive

Weitere Informationen

Diamond nanowhiskers were fabricated by etching as-grown and aluminum coated diamond films in radio frequency (RF) Ar/O2 plasma. It was found that diamond nanowhiskers could be obtained by anisotropic etching of both kinds of films. For the as-grown diamond film, the whiskers randomly formed on the diamond surface with higher etching rate. However, for the Al-coated diamond film, an energy dispersive X-ray spectroscopy measurement revealed that the distribution of the whiskers was the same as that of the coated Al particles. During the etching process, Al particles served as masks contributing to restraining the etching of the film underneath. It was found that the distribution of the whiskers was significantly influenced by the Al coating. The whiskers (1 μm in height and 50 nm in diameter) could be obtained under the optimum etching condition. In addition, the dependence of the distribution of the whiskers on Al coating time was demonstrated.