Treffer: Thermal effects on light-emission properties of GaN LEDs grown by metal-organic vapor phase epitaxy
Title:
Thermal effects on light-emission properties of GaN LEDs grown by metal-organic vapor phase epitaxy
Authors:
Source:
First International Symposium on Growth of Nitrides (ISGN-1), Linköping, 4-7 June 2006Journal of crystal growth. 300(1):90-93
Publisher Information:
Amsterdam: Elsevier, 2007.
Publication Year:
2007
Physical Description:
print, 8 ref
Original Material:
INIST-CNRS
Subject Terms:
Crystallography, Cristallographie cristallogenèse, Geology, Géologie, Metallurgy, welding, Métallurgie, soudage, Sciences exactes et technologie, Exact sciences and technology, Physique, Physics, Etat condense: structure electronique, proprietes electriques, magnetiques et optiques, Condensed matter: electronic structure, electrical, magnetic, and optical properties, Propriétés optiques, spectroscopie et autres interactions de la matière condensée avec les particules et le rayonnement, Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation, Photoluminescence, Domaines interdisciplinaires: science des materiaux; rheologie, Cross-disciplinary physics: materials science; rheology, Science des matériaux, Materials science, Méthodes de croissance cristalline; physique de la croissance cristalline, Methods of crystal growth; physics of crystal growth, Croissance en phase vapeur, Growth from vapor, Méthodes de dépôt de films et de revêtements; croissance de films et épitaxie, Methods of deposition of films and coatings; film growth and epitaxy, Epitaxie en phase vapeur; croissance en phase vapeur, Vapor phase epitaxy; growth from vapor phase, Sciences appliquees, Applied sciences, Electronique, Electronics, Electronique des semiconducteurs. Microélectronique. Optoélectronique. Dispositifs à l'état solide, Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices, Dispositifs optoélectroniques, Optoelectronic devices, Bande interdite, Energy gap, Banda prohibida, Composé minéral, Inorganic compound, Compuesto inorgánico, Croissance cristalline en phase vapeur, Crystal growth from vapors, Diode électroluminescente, Light emitting diode, Diodo electroluminescente, Dépendance température, Temperature dependence, Electroluminescence, Electroluminiscencia, Emission optique, Light emission, Emisión óptica, Epitaxie phase vapeur, VPE, Gallium nitrure, Gallium nitride, Galio nitruro, Luminescence, Luminiscencia, Méthode MOVPE, MOVPE method, Método MOVPE, Photoluminescence, Fotoluminiscencia, Propriété optique, Optical properties, Propiedad óptica, Propriété électronique, Electronic properties, Propiedad electrónica, Semiconducteur III-V, III-V semiconductors, 8110B, 8115K, 8560J, GaN, Substrat saphir, 81.05.Ea, 81.15.Gh, 85.60.Jb, A1 -Electroluminescence, A1.UV, A3.MOVPE, Al.Photoluminescence, B3.Schottky, Bl.GaN
Time:
7855
Document Type:
Konferenz
Conference Paper
File Description:
text
Language:
English
Author Affiliations:
Department of Electronic Engineering, Kogakuin University, 2665-1 Nakano-machi, Hachiohji, Tokyo 192-0015, Japan
ISSN:
0022-0248
Rights:
Copyright 2007 INIST-CNRS
CC BY 4.0
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
CC BY 4.0
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
Notes:
Electronics
Physics and materials science
Physics of condensed state: electronic structure, electrical, magnetic and optical properties
Physics and materials science
Physics of condensed state: electronic structure, electrical, magnetic and optical properties
Accession Number:
edscal.18633530
Database:
PASCAL Archive
Weitere Informationen
Photoluminescence (PL) spectra of GaN layers grown on sapphire substrates by metal-organic vapor phase epitaxy (MOVPE) were observed at temperatures from RT to 500 K. The spectra include the near-band-edge emission (NBE) and yellow luminescence (YL). The peak energy of the NBE is shifted towards lower energy with increasing observed temperature. UV light-emitting diodes (LEDs) utilizing band-gap narrowing due to thermal effects are proposed and their advantages for integration are discussed.