Treffer: Thermal analysis of high power GaN-based LEDs with ceramic package

Title:
Thermal analysis of high power GaN-based LEDs with ceramic package
Authors:
LIANQIAO YANG, SUNHO JANG, HWANG, Woongjoon, SHIN, Moowhan
Source:
6th symposium of the Korean Society of thermophysical propertiesThermochimica acta. 455(1-2):95-99
Publisher Information:
Amsterdam: Elsevier Science, 2007.
Publication Year:
2007
Physical Description:
print, 14 ref
Original Material:
INIST-CNRS
Subject Terms:
General chemistry, physical chemistry, Chimie générale, chimie physique, Metallurgy, welding, Métallurgie, soudage, Sciences exactes et technologie, Exact sciences and technology, Sciences appliquees, Applied sciences, Electronique, Electronics, Electronique des semiconducteurs. Microélectronique. Optoélectronique. Dispositifs à l'état solide, Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices, Dispositifs optoélectroniques, Optoelectronic devices, Analyse thermique, Thermal analysis, Análisis térmico, Céramique, Ceramic materials, Cerámica, Diode électroluminescente, Light emitting diode, Diodo electroluminescente, Gallium nitrure, Gallium nitride, Galio nitruro, Méthode volume fini, Finite volume method, Método volumen finito, Packaging électronique, Electronic packaging, Packaging electrónico, Résistance thermique contact, Contact thermal resistance, Resistencia térmica contacto, Résistance thermique, Thermal resistance, Resistencia térmica, Résistance étalement, Spreading resistance, Resistencia ensanchamiento, Ceramic package, Finite volume method (FVM), Light emitting diode (LED), Spreading/constriction resistance, Transient thermal resistance
Document Type:
Konferenz Conference Paper
File Description:
text
Language:
English
Author Affiliations:
Department of Materials Science & Engineering, Myong Ji University, Yongin 449-728, Korea, Republic of
ISSN:
0040-6031
Access URL:
http://pascal-francis.inist.fr/vibad/index.php?action=search&terms=18642245
Rights:
Copyright 2007 INIST-CNRS
CC BY 4.0
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
Notes:
Electronics
Accession Number:
edscal.18642245
Database:
PASCAL Archive

Weitere Informationen

In this paper we present thermal analysis of three kinds of ceramic package designs for high power LEDs. The analysis was made by transient thermal measurement and thermal simulation using the Finite Volume Method. The three ceramic packages under investigation employ same configuration of GaN-based chip, but they have different size and distribution of thermal vias. Three designs of LED packages resulted in significantly different thermal behaviors. Thermal behaviors, described as thermal resistance, of the three packaging designs were compared and evaluated as functions of bulk thermal resistance, spreading resistance, and surface roughness. The deviation between the simulated results and measured data were attributed to the different surface roughness in the interfaces between the packaging components. It was demonstrated that the junction temperature decreases with the effective contact area ratio in the LED packages.