Treffer: Suppression of 193-nm photoresist deformation by H2 addition to fluorocarbon plasma in via-hole etching
Title:
Suppression of 193-nm photoresist deformation by H2 addition to fluorocarbon plasma in via-hole etching
Authors:
Source:
Proceedings of the International Symposium on Dry Process (DPS 2005), Jeju, Korea, November 28-30, 2005Thin solid films. 515(12):5012-5018
Publisher Information:
Lausanne: Elsevier Science, 2007.
Publication Year:
2007
Physical Description:
print, 26 ref
Original Material:
INIST-CNRS
Subject Terms:
Crystallography, Cristallographie cristallogenèse, Electronics, Electronique, Metallurgy, welding, Métallurgie, soudage, Condensed state physics, Physique de l'état condensé, Sciences exactes et technologie, Exact sciences and technology, Physique, Physics, Physique des gaz, des plasmas et des decharges electriques, Physics of gases, plasmas and electric discharges, Physique des plasmas et décharges électriques, Physics of plasmas and electric discharges, Applications des plasmas, Plasma applications, Implantation ionique et dépôt par plasma, Plasma-based ion implantation and deposition, Domaines interdisciplinaires: science des materiaux; rheologie, Cross-disciplinary physics: materials science; rheology, Science des matériaux, Materials science, Méthodes de dépôt de films et de revêtements; croissance de films et épitaxie, Methods of deposition of films and coatings; film growth and epitaxy, Dépôt assisté par faisceaux électroniques et ioniques; placage ionique, Ion and electron beam-assisted deposition; ion plating, Sciences appliquees, Applied sciences, Electronique, Electronics, Electronique des semiconducteurs. Microélectronique. Optoélectronique. Dispositifs à l'état solide, Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices, Circuits intégrés, Integrated circuits, Conception. Technologies. Analyse fonctionnement. Essais, Design. Technologies. Operation analysis. Testing, Fabrication microélectronique (technologie des matériaux et des surfaces), Microelectronic fabrication (materials and surfaces technology), Distorsion, Distortion, Distorsión, Déformation, Deformation, Deformación, Dépendance du temps, Time dependence, Dependencia del tiempo, Dépôt plasma, Plasma deposition, Depósito plasma, Fabrication microélectronique, Microelectronic fabrication, Fabricación microeléctrica, Fiabilité, Reliability, Fiabilidad, Formation motif, Patterning, Formacíon motivo, Gravure, Engraving, Grabado, Interconnexion, Interconnection, Interconexión, Photorésist, Photoresist, Fotorresistencia, Polymère, Polymer, Polímero, Spectre photoélectron RX, X-ray photoelectron spectra, Traitement par plasma, Plasma assisted processing, 8115J, 8540H, Etching, Hydrogen, Plasma processing and deposition, X-ray photoelectron spectroscopy (XPS)
Time:
5277, 8540
Document Type:
Konferenz
Conference Paper
File Description:
text
Language:
English
Author Affiliations:
Process Development Department, Process Technology Development Div., Renesas Technology Corp., 4-1 Mizuhara, Itami-shi, Hyogo 664-0005, Japan
Process Technology Development Center, Semiconductor Company, Matsushita Electric Industrial Co., Ltd., 19 Nishikujo-kasuga-cho, Minami-ku, Kyoto 601-8413, Japan
Process Technology Development Center, Semiconductor Company, Matsushita Electric Industrial Co., Ltd., 19 Nishikujo-kasuga-cho, Minami-ku, Kyoto 601-8413, Japan
ISSN:
0040-6090
Rights:
Copyright 2007 INIST-CNRS
CC BY 4.0
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
CC BY 4.0
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
Notes:
Electronics
Physics and materials science
Physics of gases, plasmas and electric discharges
Physics and materials science
Physics of gases, plasmas and electric discharges
Accession Number:
edscal.18654588
Database:
PASCAL Archive
Weitere Informationen
Suppression of 193-nm photoresist deformation by H2 addition to fluorocarbon plasmas in via-hole etching is investigated for sub-65-nm-node dual-damascene patterning. Photoresist deformation causes profile distortion and results in degradation of reliability, such as the line-to-line time dependent dielectric breakdown. To prevent profile distortion, H2 addition to fluorocarbon plasma is investigated in terms of fluorocarbon polymer and photoresist modification. XPS, FT-IR, and highlight etching investigations reveal that the H2 plasma treatment extracts oxygen from the photoresist and modifies it. This modification suppresses the photoresist deformation and H2 addition to fluorocarbon plasmas can have the same effects as the H2 plasma treatment. Finally, a highly reliable damascene interconnection is successfully achieved.