Treffer: Uniaxially strained silicon by wafer bonding and layer transfer
Title:
Uniaxially strained silicon by wafer bonding and layer transfer
Authors:
Source:
EUROSOI'06 Conference. Selected papersSolid-state electronics. 51(2):226-230
Publisher Information:
Oxford: Elsevier Science, 2007.
Publication Year:
2007
Physical Description:
print, 11 ref
Original Material:
INIST-CNRS
Subject Terms:
Electronics, Electronique, Sciences exactes et technologie, Exact sciences and technology, Sciences appliquees, Applied sciences, Electronique, Electronics, Electronique des semiconducteurs. Microélectronique. Optoélectronique. Dispositifs à l'état solide, Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices, Fabrication microélectronique (technologie des matériaux et des surfaces), Microelectronic fabrication (materials and surfaces technology), Couche mince, Thin film, Capa fina, Délaminage, Delamination, Delaminación, Fabrication microélectronique, Microelectronic fabrication, Fabricación microeléctrica, Fixation pastille, Wafer bonding, Fijación pastilla, Implantation ion, Ion implantation, Implantación ión, Méthode élément fini, Finite element method, Método elemento finito, Pastille électronique, Wafer, Pastilla electrónica, Silicium, Silicon, Silicio, Simulation numérique, Numerical simulation, Simulación numérica, Spectrométrie Raman, Raman spectrometry, Espectrometría Raman, Spectrométrie UV, Ultraviolet spectrometry, Espectrometría UV, Si, Raman spectroscopy, Strained silicon, Uniaxial strain
Document Type:
Konferenz
Conference Paper
File Description:
text
Language:
English
Author Affiliations:
Max Planck Institute of Microstructure Physics, Weinberg 2, 06120 Halle, Germany
Fraunhofer Institute for Mechanics of Materials, Heideallee 19, 06120 Halle, Germany
Martin Luther Universität Halle-Wittenberg, Hoher Weg 8, 06099 Halle, Germany
Fraunhofer Institute for Mechanics of Materials, Heideallee 19, 06120 Halle, Germany
Martin Luther Universität Halle-Wittenberg, Hoher Weg 8, 06099 Halle, Germany
ISSN:
0038-1101
Rights:
Copyright 2007 INIST-CNRS
CC BY 4.0
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
CC BY 4.0
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
Notes:
Electronics
Accession Number:
edscal.18658365
Database:
PASCAL Archive
Weitere Informationen
Uniaxial strain on wafer-level was realised by mechanically bending and direct wafer bonding of Si wafers in the bent state followed by thinning one of the Si wafers by the smart-cut process. This approach is flexible and allows to obtain different strain values at wafer-level in both tension and compression. UV micro-Raman spectroscopy was used to determine the strain in the thin transferred Si layers. Numerical modelling by 3D finite elements of the strain provided a good description of the experimental results.