• Ultra-thin fully-depleted SOI...

Treffer: Ultra-thin fully-depleted SOI MOSFETs : Special charge properties and coupling effects

Title:
Ultra-thin fully-depleted SOI MOSFETs : Special charge properties and coupling effects
Authors:
EMINENTE, S, CRISTOLOVEANU, S, CLERC, R, OHATA, A, GHIBAUDO, G
Source:
EUROSOI'06 Conference. Selected papersSolid-state electronics. 51(2):239-244
Publisher Information:
Oxford: Elsevier Science, 2007.
Publication Year:
2007
Physical Description:
print, 8 ref
Original Material:
INIST-CNRS
Subject Terms:
Electronics, Electronique, Sciences exactes et technologie, Exact sciences and technology, Sciences appliquees, Applied sciences, Electronique, Electronics, Electronique des semiconducteurs. Microélectronique. Optoélectronique. Dispositifs à l'état solide, Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices, Transistors, Electronique moléculaire, nanoélectronique, Molecular electronics, nanoelectronics, Actes congrès, Proceedings, Ponencia congreso, Couche appauvrissement, Depletion layer, Capa empobrecimiento, Couche mince isolante, Insulating thin films, Couche mince, Thin film, Capa fina, Couche ultramince, Ultrathin films, Densité trou, Hole density, Densidad huecos, Densité électron, Electron density, Densidad electrón, Dispositif effet tunnel, Tunneling device, Dispositivo efecto túnel, Grille transistor, Transistor gate, Rejilla transistor, Méthode analytique, Analytical method, Método analítico, Méthode mesure, Measurement method, Método medida, Nanoélectronique, Nanoelectronics, Nanoelectrónica, Oxyde grille, Gate oxide, Oxido rejilla, Propriété électrochimique, Electrochemical properties, Propiedad electroquímica, Seuil tension, Voltage threshold, Umbral tensión, Silicium nitrure, Silicon nitride, Silicio nitruro, Silicium oxyde, Silicon oxides, Technologie silicium sur isolant, Silicon on insulator technology, Tecnología silicio sobre aislante, Transistor MOSFET, MOSFET, Al, O Si, SiO2, Characterization, Coupling, SOI, Threshold voltage
Document Type:
Konferenz Conference Paper
File Description:
text
Language:
English
Author Affiliations:
IMEP, Minatec -INPG, 3 Parvis Louis Néeel, BP 257, 38016 Grenoble, France
ISSN:
0038-1101
Access URL:
http://pascal-francis.inist.fr/vibad/index.php?action=search&terms=18658367
Rights:
Copyright 2007 INIST-CNRS
CC BY 4.0
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
Notes:
Electronics
Accession Number:
edscal.18658367
Database:
PASCAL Archive

Weitere Informationen

A standard characterization method in fully depleted SOI devices consists in biasing the back interface in the accumulation regime, and measuring the front-channel properties. In ultra thin body device however, it is sometimes no longer possible to achieve such an accumulation regime at the back interface. This unusual effect is investigated by detailed simulations and analytical modelling of the potential and electron/hole concentrations. The enhancement of the interface coupling effect in ultra thin body devices, called super-coupling, can explain previously published experimental data [Pretet J, Ohata A, Dieudonne F, Allibert F, Bresson N, Matsumoto T, et al. Scaling issues for advanced SOI devices: gate oxide tunneling, thin buried oxide, and ultra-thin films. In: 7th International symposium silicon nitride and silicon dioxide thin insulating films, Paris, France, 2003. Electrochemical Society Proceedings, vol. 2003-02, Penning-ton (USA); 2003. p. 476-87], and reveals new challenges in the characterization of advanced SOI devices.