Treffer: p-Type ZnO on sapphire by using O2-N2 co-activating and fabrication of ZnO LED
Title:
p-Type ZnO on sapphire by using O2-N2 co-activating and fabrication of ZnO LED
Authors:
Source:
14th International Conference on Molecular Beam Epitaxy (MBE-XIV), 3-8 September 2006, Tokyo, JapanJournal of crystal growth. 301-302:362-365
Publisher Information:
Amsterdam: Elsevier, 2007.
Publication Year:
2007
Physical Description:
print, 14 ref
Original Material:
INIST-CNRS
Subject Terms:
Crystallography, Cristallographie cristallogenèse, Geology, Géologie, Metallurgy, welding, Métallurgie, soudage, Sciences exactes et technologie, Exact sciences and technology, Physique, Physics, Etat condense: structure electronique, proprietes electriques, magnetiques et optiques, Condensed matter: electronic structure, electrical, magnetic, and optical properties, Structure électronique et propriétés électriques des surfaces, interfaces, couches minces et structures de basse dimensionnalité, Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures, Conductivité de surface et phénomènes de porteurs en surface, Surface conductivity and carrier phenomena, Domaines interdisciplinaires: science des materiaux; rheologie, Cross-disciplinary physics: materials science; rheology, Science des matériaux, Materials science, Méthodes de dépôt de films et de revêtements; croissance de films et épitaxie, Methods of deposition of films and coatings; film growth and epitaxy, Théorie et modèles de la croissance de films, Theory and models of film growth, Epitaxie par faisceaux chimiques, ioniques, atomiques et moléculaires, Molecular, atomic, ion, and chemical beam epitaxy, Sciences appliquees, Applied sciences, Electronique, Electronics, Electronique des semiconducteurs. Microélectronique. Optoélectronique. Dispositifs à l'état solide, Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices, Dispositifs optoélectroniques, Optoelectronic devices, Bande interdite, Energy gap, Banda prohibida, Densité porteur charge, Charge carrier density, Concentración portador carga, Diode électroluminescente, Light emitting diode, Diodo electroluminescente, Electroluminescence, Electroluminiscencia, Epitaxie jet moléculaire, Molecular beam epitaxy, Mesure électrique, Electrical measurement, Medida eléctrica, Mécanisme croissance, Growth mechanism, Mecanismo crecimiento, Saphir, Sapphire, Zafiro, Semiconducteur II-VI, II-VI semiconductors, Zinc oxyde, Zinc oxide, Zinc óxido, 6855A, 8105D, 8115H, 8560J, Substrat saphir, ZnO, 78.55.Et; 81.15.Hi; 85.60.Jb, A3. Molecular beam epitaxy; B2. Semiconducting II-VI materials; B3. Light-emitting diodes
Document Type:
Konferenz
Conference Paper
File Description:
text
Language:
English
Author Affiliations:
Key Laboratory of Excited State Processes, Chinese Academy of Sciences, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, 16-Dongnanhu Road, Changchun 130033, China
Department of Physics, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong-Kong
Department of Physics, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong-Kong
ISSN:
0022-0248
Rights:
Copyright 2007 INIST-CNRS
CC BY 4.0
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
CC BY 4.0
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
Notes:
Electronics
Physics and materials science
Physics of condensed state: electronic structure, electrical, magnetic and optical properties
Physics and materials science
Physics of condensed state: electronic structure, electrical, magnetic and optical properties
Accession Number:
edscal.18666245
Database:
PASCAL Archive
Weitere Informationen
A co-activating route was employed to fabricate ZnO light-emitting diode (LED) by using molecular beam epitaxy. N2 was used as the acceptor dopant source and O2 was used as assistant gas for N2 decomposing more than only oxygen source. Emission spectra of the N2 + O2 mixture plasma were monitored in situ in order to adjust growth parameters timely. Under the assistance of O2, N atoms content in the plasma of the mixture shows a significant increase compared to the case without O2 assistance. Electrical measurements of the as-grown p-type ZnO on sapphire show a carrier concentration of 1.2 x 18 cm-3 and a mobility approaching 1cm2V-1 s-1. A ZnO LED was fabricated by depositing undoped n-type ZnO on the p-type layer. The turn-on voltage at 100 K is about 3.70 V, which approaches the bandgap of ZnO. Electroluminescence spectra show two bands: one is centered at 423 and the other centered at 523 nm, respectively.