• Thermal stability of Ti/Pt/Au...

Treffer: Thermal stability of Ti/Pt/Au ohmic contacts for cryogenically cooled InP-based HEMTs on (41 1)A-oriented substrates by MBE

Title:
Thermal stability of Ti/Pt/Au ohmic contacts for cryogenically cooled InP-based HEMTs on (41 1)A-oriented substrates by MBE
Authors:
WATANABE, Issei, SHINOHARA, Keisuke, KITADA, Takahiro, SHIMOMURA, Satoshi, ENDOH, Akira, YAMASHITA, Yoshimi, MIMURA, Takashi, HIYAMIZU, Satoshi, MATSUI, Toshiaki
Source:
14th International Conference on Molecular Beam Epitaxy (MBE-XIV), 3-8 September 2006, Tokyo, JapanJournal of crystal growth. 301-302:1025-1029
Publisher Information:
Amsterdam: Elsevier, 2007.
Publication Year:
2007
Physical Description:
print, 12 ref
Original Material:
INIST-CNRS
Subject Terms:
Crystallography, Cristallographie cristallogenèse, Geology, Géologie, Metallurgy, welding, Métallurgie, soudage, Sciences exactes et technologie, Exact sciences and technology, Physique, Physics, Etat condense: structure, proprietes mecaniques et thermiques, Condensed matter: structure, mechanical and thermal properties, Surfaces et interfaces; couches minces et trichites (structure et propriétés non électroniques), Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties), Propriétés physiques non électroniques de couches minces, Physical properties of thin films, nonelectronic, Stabilité thermique; effets thermiques, Thermal stability; thermal effects, Domaines interdisciplinaires: science des materiaux; rheologie, Cross-disciplinary physics: materials science; rheology, Science des matériaux, Materials science, Matériaux particuliers, Specific materials, Autres semiconducteurs, Other semiconductors, Méthodes de dépôt de films et de revêtements; croissance de films et épitaxie, Methods of deposition of films and coatings; film growth and epitaxy, Epitaxie par faisceaux chimiques, ioniques, atomiques et moléculaires, Molecular, atomic, ion, and chemical beam epitaxy, Sciences appliquees, Applied sciences, Electronique, Electronics, Electronique des semiconducteurs. Microélectronique. Optoélectronique. Dispositifs à l'état solide, Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices, Transistors, Aluminium arséniure, Aluminium arsenides, Cale espacement, Spacer, Calce espaciamiento, Composé III-V, III-V compound, Compuesto III-V, Contact ohmique, Ohmic contacts, Couche barrière, Barrier layer, Couche épaisse, Thick films, Croissance cristalline en phase vapeur, Crystal growth from vapors, Diffusion phonon, Phonon scattering, Difusión fonón, Electrode commande, Gates, Epitaxie jet moléculaire, Molecular beam epitaxy, Indium arséniure, Indium arsenides, Indium composé, Indium compounds, Indium phosphure, Indium phosphides, Or alliage, Gold alloys, Platine alliage, Platinum alloys, Propriété thermique, Thermal properties, Résistance contact, Contact resistance, Semiconducteur III-V, III-V semiconductors, Stabilité thermique, Thermal stability, Titane alliage, Titanium alloys, Transconductance, Transconductancia, Transistor mobilité électron élevée, High electron mobility transistors, 6860D, 8105E, 8115H, 8530T, InAlAs, InP, Substrat InP, 73.61.Ey; 81.15.Hi; 85.30.Tv, A3. Molecular beam epitaxy; B2. Semiconducting indium compounds; B3. High electron mobility transistors
Document Type:
Konferenz Conference Paper
File Description:
text
Language:
English
Author Affiliations:
National Institute of Information and Communications Technology, 4-2-1 Nukui-kitamachi, Koganei, Tokyo 184-8795, Japan
Osaka University, 1-3 Machikaneyama, Toyonaka, Osaka 560-8531, Japan
Fujitsu Laboratories Limited, 10-1 Morinosato-wakamiya, Atsugi, Kanagawa 243-0197, Japan
ISSN:
0022-0248
Access URL:
http://pascal-francis.inist.fr/vibad/index.php?action=search&terms=18666399
Rights:
Copyright 2007 INIST-CNRS
CC BY 4.0
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
Notes:
Electronics

Physics and materials science

Physics of condensed state: structure, mechanical and thermal properties
Accession Number:
edscal.18666399
Database:
PASCAL Archive

Weitere Informationen

We investigated the contact resistance of a non-alloyed Ti/Pt/Au ohmic electrode to obtain thermally stable source-drain resistance of cryogenically cooled Ino.75Gao.25As/In0.52Al0.48As high electron mobility transistors (HEMTs) fabricated on (411)A-oriented InP substrates by molecular beam epitaxy. A contact resistance of 0.26Ωmm, which strongly depended on InAlAs spacer and barrier layers, was achieved at 16K (25% below the value at 300 K) for the non-alloyed Ti/Pt/Au ohmic electrode formed on the Ino.75Gao.25As/In0.52Al0.48As HEMT structure with 3-nm-thick InAlAs spacer and 10-nm-thick InAlAs barrier layers. For a 195-nm-gate HEMT, we achieved a maximum transconductance (gm) of 2.25 S/mm at 16K (26% above the value at 300K), which, to our knowledge, is one of the highest values for HEMTs ever reported. This extremely high gm was attributed to not only 33% lower source-drain resistance (0.18 Ω mm at 16 K) because of thermally stable and low contact resistance but also 19% lower transit time under the gate (0.39ps at 16K) because of phonon scattering suppression compared with the 300 K values.