Treffer: Transistor with organic emitter and electrodeposited Au base
Title:
Transistor with organic emitter and electrodeposited Au base
Authors:
Source:
Physica status solidi. A, Applications and materials science (Print). 204(4):940-944
Publisher Information:
Berlin: Wiley-VCH, 2007.
Publication Year:
2007
Physical Description:
print, 20 ref
Original Material:
INIST-CNRS
Subject Terms:
Crystallography, Cristallographie cristallogenèse, Electronics, Electronique, Nanotechnologies, nanostructures, nanoobjects, Nanotechnologies, nanostructures, nanoobjets, Condensed state physics, Physique de l'état condensé, Sciences exactes et technologie, Exact sciences and technology, Sciences appliquees, Applied sciences, Electronique, Electronics, Electronique des semiconducteurs. Microélectronique. Optoélectronique. Dispositifs à l'état solide, Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices, Divers, Miscellaneous, Dépôt électrolytique, Electrodeposition, Depósito electrolítico, Epaisseur, Thickness, Espesor, Fullerènes, Fullerenes, Gain courant, Current gain, Ganancia corriente, Or, Gold, Oro, Transistor, 8530D
Document Type:
Konferenz
Conference Paper
File Description:
text
Language:
English
Author Affiliations:
Laboratório de Filmes Finos e Superfícies, Departamento de Física, Universidade Federal de Santa Catarina, Caixa Postal 476, 88040-900, Florianópolis, SC, Brazil
H. H. Wills Physics Laboratory, University of Bristol, Bristol, United Kingdom
H. H. Wills Physics Laboratory, University of Bristol, Bristol, United Kingdom
ISSN:
1862-6300
Rights:
Copyright 2007 INIST-CNRS
CC BY 4.0
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
CC BY 4.0
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
Notes:
Electronics
Accession Number:
edscal.18682610
Database:
PASCAL Archive
Weitere Informationen
In this work we present results from a metal-base transistor consisting of organic C60 as emitter, an ultrathin Au as base and n-Si as collector. The Au layer was directly electrodeposited on the n-Si surface from a commercial electrolyte containing K2SO3 and Au sulphite complexes. The fullerene emitter was subsequently evaporated on top of the Au layer. For a base thickness of 10 nm the common-base current gain is close to 1, which is a strong evidence that the transistor is a permeable base device.