Treffer: Thermal and non-thermal saturation effects in the output characteristic of UV-to-violet emitting (AlGaIn)N LEDs

Title:
Thermal and non-thermal saturation effects in the output characteristic of UV-to-violet emitting (AlGaIn)N LEDs
Authors:
BAEUMLER, M, KUNZER, M, SCHMIDT, R, LIU, S, PLETSCHEN, W, SCHLOTTER, P, KÖHLER, K, KAUFMANN, U, WAGNER, J
Source:
Physica status solidi. A, Applications and materials science (Print). 204(4):1018-1024
Publisher Information:
Berlin: Wiley-VCH, 2007.
Publication Year:
2007
Physical Description:
print, 15 ref
Original Material:
INIST-CNRS
Subject Terms:
Crystallography, Cristallographie cristallogenèse, Electronics, Electronique, Nanotechnologies, nanostructures, nanoobjects, Nanotechnologies, nanostructures, nanoobjets, Condensed state physics, Physique de l'état condensé, Sciences exactes et technologie, Exact sciences and technology, Sciences appliquees, Applied sciences, Electronique, Electronics, Electronique des semiconducteurs. Microélectronique. Optoélectronique. Dispositifs à l'état solide, Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices, Dispositifs optoélectroniques, Optoelectronic devices, Coefficient température, Temperature coefficient, Coeficiente temperatura, Diode électroluminescente, Light emitting diode, Diodo electroluminescente, Effet température, Temperature effect, Efecto temperatura, Méthode MOVPE, MOVPE method, Método MOVPE, Puissance sortie, Output power, Potencia salida, Rayonnement UV, Ultraviolet radiation, Radiación ultravioleta, Rendement quantique, Quantum yield, Rendimiento quántico, 8560J
Document Type:
Konferenz Conference Paper
File Description:
text
Language:
English
Author Affiliations:
Fraunhofer-Institut für Angewandte Festkörperphysik, TullastraBe 72, 79108 Freiburg, Germany
ISSN:
1862-6300
Access URL:
http://pascal-francis.inist.fr/vibad/index.php?action=search&terms=18682624
Rights:
Copyright 2007 INIST-CNRS
CC BY 4.0
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
Notes:
Electronics
Accession Number:
edscal.18682624
Database:
PASCAL Archive

Weitere Informationen

UV-to-violet emitting (AlGaIn)N LEDs have been investigated with respect to the temperature-dependence of the output power characteristics and non-thermal rollover of the quantum efficiency at higher current densities. Analyzing MOVPE grown LED chips emitting in the 377 to 428 nm wavelength interval, the temperature sensitivity was found to increase and the output power to decrease with decreasing wavelength A for 2 < 400 nm. A sub-linear increase of the output power with increasing injection current even in the absence of any thermal effects, i.e. a non-thermal rollover of the quantum efficiency, was observed to be most pronounced for longer wavelength LEDs (λ>400 nm). Furthermore, the transient temperature rise after turn-on has been studied for differently packaged 377 nm LEDs, for which the temperature coefficient of the output power has been found to be particularly large.