Result: Temperature dependent responsivity of quantum dot infrared photodetectors

Title:
Temperature dependent responsivity of quantum dot infrared photodetectors
Authors:
WANG, S. Y, LO, M. C, HSIAO, H. Y, LING, H. S, LEE, C. P
Source:
QWIP 2006: proceedings of the International Workshop on Quantum Well Infrared Photodetectors, Kandy, 18-24 June 2006Infrared physics & technology. 50(2-3):166-170
Publisher Information:
Amsterdam: Elsevier, 2007.
Publication Year:
2007
Physical Description:
print, 15 ref
Original Material:
INIST-CNRS
Subject Terms:
Optics, Optique, Condensed state physics, Physique de l'état condensé, Sciences exactes et technologie, Exact sciences and technology, Physique, Physics, Generalites, General, Instruments, appareillage, composants et techniques communs à plusieurs branches de la physique et de l'astronomie, Instruments, apparatus, components and techniques common to several branches of physics and astronomy, Instrumentation, équipements et techniques en infrarouge, onde submillimétrique, hyperfréquence et radiofréquence, Infrared, submillimeter wave, microwave and radiowave instruments, equipment and techniques, Bolomètres; récepteurs et détecteurs en infrarouge, onde submillimétrique, hyperfréquence et radiofréquence, Bolometer; infrared, submillimeter wave, microwave and radiowave receivers and detectors, Sciences appliquees, Applied sciences, Electronique, Electronics, Electronique des semiconducteurs. Microélectronique. Optoélectronique. Dispositifs à l'état solide, Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices, Dispositifs optoélectroniques, Optoelectronic devices, Dépendance température, Temperature dependence, Détecteur IR, Infrared detectors, Détecteur rayonnement, Radiation detectors, Fonction réponse, Response functions, Méthode mesure, Measuring methods, Niveau Fermi, Fermi level, Photodétecteur, Photodetectors, Point quantique, Quantum dots, Rendement quantique, Quantum yield, 0757K, 8560G, Dispositif point quantique, Quantum dot devices, GaAs, InAs/GaAs, 85.60.Gz; 73.50.Pz, Quantum dot; Intersubband; Infrared detector
Document Type:
Conference Conference Paper
File Description:
text
Language:
English
Author Affiliations:
Institute of Astronomy and Astrophysics, Academia Sinica, P.O. Box 23-141, Taipei 106, Tawain, Province of China
Department of Electronic Engineering, National Chiao Tung University, Hsin Chu 300, Tawain, Province of China
Institute of Opto-electronics Engineering, Chang Gung University, Tao Yuan 333, Tawain, Province of China
ISSN:
1350-4495
Access URL:
http://pascal-francis.inist.fr/vibad/index.php?action=search&terms=18744852
Rights:
Copyright 2007 INIST-CNRS
CC BY 4.0
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
Notes:
Electronics

Metrology
Accession Number:
edscal.18744852
Database:
PASCAL Archive

Further Information

Temperature dependent behavior of the responsivity of InAs/GaAs quantum dot infrared photodetectors was investigated with detailed measurement of the current gain. The current gain varied about two orders of magnitude with 100 K temperature change. Meanwhile, the change in quantum efficiency is within a factor of 10. The dramatic change of the current gain is explained by the repulsive coulomb potential of the extra carriers in the QDs. With the measured current gain, the extra carrier number in QDs was calculated. More than one electron per QD could be captured as the dark current increases at 150 K. The extra electrons in the QDs elevated the Fermi level and changed the quantum efficiency of the QDIPs. The temperature dependence of the responsivity was qualitatively explained with the extra electrons.