Treffer: pH sensor on O-terminated diamond using boron-doped channel

Title:
pH sensor on O-terminated diamond using boron-doped channel
Authors:
DENISENKO, A, JAMOMMAM, G, EL-HAJJ, H, KOHN, E
Source:
Proceedings of Diamond 2006, the 17th European conference on diamond, diamond-like materials, carbon nanotubes, nitrides & silicon carbideDiamond and related materials. 16(4-7):905-910
Publisher Information:
Amsterdam: Elsevier, 2007.
Publication Year:
2007
Physical Description:
print, 21 ref
Original Material:
INIST-CNRS
Subject Terms:
Crystallography, Cristallographie cristallogenèse, Sciences exactes et technologie, Exact sciences and technology, Physique, Physics, Generalites, General, Instruments, appareillage, composants et techniques communs à plusieurs branches de la physique et de l'astronomie, Instruments, apparatus, components and techniques common to several branches of physics and astronomy, Techniques et équipements généraux, General equipment and techniques, Capteurs (chimiques, optiques, électriques, de mouvement, de gaz, etc.); télédétection, Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing, Etat condense: structure, proprietes mecaniques et thermiques, Condensed matter: structure, mechanical and thermal properties, Surfaces et interfaces; couches minces et trichites (structure et propriétés non électroniques), Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties), Structure et morphologie de couches minces, Thin film structure and morphology, Structure et morphologie; épaisseur, Structure and morphology; thickness, Domaines interdisciplinaires: science des materiaux; rheologie, Cross-disciplinary physics: materials science; rheology, Science des matériaux, Materials science, Matériaux particuliers, Specific materials, Fullerènes et matériaux apparentés; diamants, graphite, Fullerenes and related materials; diamonds, graphite, Sciences appliquees, Applied sciences, Electronique, Electronics, Electronique des semiconducteurs. Microélectronique. Optoélectronique. Dispositifs à l'état solide, Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices, Transistors, Addition bore, Boron additions, Addition indium, Indium additions, Capteur chimique, Chemical sensors, Capteur, Sensors, Diamant, Diamonds, Dopage, Doping, Electrode carbone, Carbon electrode, Electrodo carbono, Electrode commande, Gates, Electrolyte, Electrolytes, Interface, Interfaces, Microstructure, Monocristal, Monocrystals, Oxydation, Oxidation, Solution électrolyte, Electrolyte solution, Solución electrólito, Stabilité chimique, Chemical stability, Estabilidad química, Transistor effet champ, Field effect transistors, pH, pH value, 0707D, 6855J, 8105U, 8530T, Substrat diamant, Boron doping, Ion sensing, Oxygen termination
Document Type:
Konferenz Conference Paper
File Description:
text
Language:
English
Author Affiliations:
Department of Electron Devices and Circuits, University of Ulm, 89069 Ulm, Germany
ISSN:
0925-9635
Access URL:
http://pascal-francis.inist.fr/vibad/index.php?action=search&terms=18759875
Rights:
Copyright 2007 INIST-CNRS
CC BY 4.0
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
Notes:
Electronics

Metrology

Physics and materials science

Physics of condensed state: structure, mechanical and thermal properties
Accession Number:
edscal.18759875
Database:
PASCAL Archive

Weitere Informationen

A concept of an ion sensitive FET (ISFET) on diamond using a thin and highly boron-doped channel is described. The doped channel is in direct contact to the electrolyte solution. The diamond surface is oxygen terminated to provide pH sensitivity and chemical stability. The first set of pH-sensitive ISFET microstructures with the extrinsically doped channel is fabricated on 100-oriented single crystal diamond substrate using a solid doping source technique and a wet chemical oxidation for the O termination. The fabricated structures show pH sensitivity close to the Nernst's limit of 59 mV/pH. The ISFET characteristics have been reproducible and did not degrade after repeated cycling between 0.1 M H2SΟ4 and 0.1 M KOH solutions. It is shown that only a part of the applied gate potential to the diamond-electrolyte interface drops within the delta-doped channel. The possible origin of this effect is discussed by analysing the electrochemical impedance characteristics of the boron-doped diamond electrode.