Treffer: Studies of key technologies for large area CdTe thin film solar cells
Title:
Studies of key technologies for large area CdTe thin film solar cells
Authors:
Source:
Proceedings of Symposium O on thin film chalcogenide photovoltaic materials, EMRS 2006 conference, Nice, France, May 29-June 2, 2006Thin solid films. 515(15):5792-5797
Publisher Information:
Lausanne: Elsevier Science, 2007.
Publication Year:
2007
Physical Description:
print, 8 ref
Original Material:
INIST-CNRS
Subject Terms:
Crystallography, Cristallographie cristallogenèse, Electronics, Electronique, Metallurgy, welding, Métallurgie, soudage, Condensed state physics, Physique de l'état condensé, Sciences exactes et technologie, Exact sciences and technology, Physique, Physics, Domaines interdisciplinaires: science des materiaux; rheologie, Cross-disciplinary physics: materials science; rheology, Science des matériaux, Materials science, Matériaux particuliers, Specific materials, Autres semiconducteurs, Other semiconductors, Méthodes de dépôt de films et de revêtements; croissance de films et épitaxie, Methods of deposition of films and coatings; film growth and epitaxy, Dépôt chimique en phase vapeur (incluant le cvd activé par plasma, mocvd, etc.), Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.), Sciences appliquees, Applied sciences, Electronique, Electronics, Electronique des semiconducteurs. Microélectronique. Optoélectronique. Dispositifs à l'état solide, Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices, Circuits intégrés, Integrated circuits, Conception. Technologies. Analyse fonctionnement. Essais, Design. Technologies. Operation analysis. Testing, Fabrication microélectronique (technologie des matériaux et des surfaces), Microelectronic fabrication (materials and surfaces technology), Article synthèse, Reviews, Bande interdite, Energy gap, Cadmium tellurure, Cadmium tellurides, Cellule solaire, Solar cells, Composé ternaire, Ternary compounds, Couche mince, Thin films, Dispositif couche mince, Thin film devices, Etain oxyde, Tin oxides, Fabrication microélectronique, Microelectronic fabrication, Fabricación microeléctrica, Gravure, Etching, Méthode PECVD, PECVD, Nitrique acide, Nitric acid, Nítrico ácido, Propriété électronique, Electronic properties, Propiedad electrónica, Recuit, Annealing, Semiconducteur II-VI, II-VI semiconductors, Zinc tellurure, Zinc tellurides, 8105D, 8115G, 8460J, 8540H, Cd1-xZnxTe, CdTe, SnO2, Te Zn, ZnTe, CdTe thin film solar cells, Pilot manufacture line, Produce technology
Document Type:
Konferenz
Conference Paper
File Description:
text
Language:
English
Author Affiliations:
Department of Materials Science, Sichuan University, Chengdu 610064, China
ISSN:
0040-6090
Rights:
Copyright 2007 INIST-CNRS
CC BY 4.0
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
CC BY 4.0
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
Notes:
Electronics
Physics and materials science
Physics and materials science
Accession Number:
edscal.18781034
Database:
PASCAL Archive
Weitere Informationen
The structure and main manufacturing technologies of CdTe film solar cells of large area are reviewed. Among the technologies, some have been developed for application in a pilot manufacturing line. The high resistant SnO2 (HRT) thin films have been fabricated by PECVD. The effects of annealing on the structure and properties have been studied. A surface etching process of CdTe in low temperature and lower concentration of nitric acid has been developed. The Cd1-xZnxTe ternary compound films have been studied. In order to improve the back contact layer, Cd0.4Zn0.6Te layer with 1.8 eV band gap as a substitute for ZnTe layer is introduced in CdTe cells. The effects of the technologies on performance of CdTe cells and feasibility of application in the modules are discussed.