• Testing ternary content addres...

Treffer: Testing ternary content addressable memories with active neighbourhood pattern-sensitive faults

Title:
Testing ternary content addressable memories with active neighbourhood pattern-sensitive faults
Authors:
HUANG, Y.-J, LI, J.-F
Source:
Selected best papers from ETS'06IET computers & digital techniques (Print). 1(3):246-255
Publisher Information:
Stevenage: Institution of Engineering and Technology, 2007.
Publication Year:
2007
Physical Description:
print, 36 ref
Original Material:
INIST-CNRS
Subject Terms:
Electronics, Electronique, Computer science, Informatique, Telecommunications, Télécommunications, Sciences exactes et technologie, Exact sciences and technology, Sciences appliquees, Applied sciences, Electronique, Electronics, Essais, mesure, bruit et fiabilité, Testing, measurement, noise and reliability, Electronique des semiconducteurs. Microélectronique. Optoélectronique. Dispositifs à l'état solide, Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices, Transistors, Circuits intégrés, Integrated circuits, Circuits intégrés par fonction (dont mémoires et processeurs), Integrated circuits by function (including memories and processors), Stockage et lecture de l'information, Storage and reproduction of information, Mémoires de masse magnétiques et optiques, Magnetic and optical mass memories, Algorithme, Algorithm, Algoritmo, Circuit intégré, Integrated circuit, Circuito integrado, Détection défaut, Defect detection, Detección imperfección, Mémoire accès direct, Random access memory, Memoria acceso directo, Mémoire associative, Associative memory, Memoria asociativa, Mémoire semiconducteur, Semiconductor storage, Memoria semiconductor, Méthode essai, Test method, Método ensayo, Structure cellulaire, Cell structure, Estructura celular, Transistor
Document Type:
Konferenz Conference Paper
File Description:
text
Language:
English
Author Affiliations:
Advanced Reliable Systems (ARES) Laboratory, Department of Electrical Engineering, National Central University, Jhongli 320, Tawain, Province of China
ISSN:
1751-8601
Access URL:
http://pascal-francis.inist.fr/vibad/index.php?action=search&terms=18789658
Rights:
Copyright 2007 INIST-CNRS
CC BY 4.0
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
Notes:
Electronics
Accession Number:
edscal.18789658
Database:
PASCAL Archive

Weitere Informationen

With shrinking transistor sizes and growing transistor density, testing neighbourhood pattern-sensitive faults (NPSFs) is increasingly important for semiconductor memories. A test methodology for detecting active NPSFs (ANPSFs) and static NPSFs (SNPSFs) in ternary content addressable memories (TCAMs) is presented. March-like and two-group test methods are two commonly used testing techniques for NPSFs in random access memories. Because of the special TCAM cell structure, however, using a unique test algorithm with only either a March-like or a two-group test operations are not time-efficient. A test methodology that employs both March-based and two-group testing to cover 100% ANPSFs and SNPSFs in TCAMs is proposed. The total test complexity of the proposed test methodology is 156 N for an N x K-bit TCAM. No TCAM circuit modification is needed to support the proposed test methodology.