Result: Silicon nanocrystal non-volatile memory for embedded memory scaling

Title:
Silicon nanocrystal non-volatile memory for embedded memory scaling
Authors:
STEIMIE, R. F, MURALIDHAR, R, PRINZ, E. J, MERCHANT, T, ACRED, B, CHANG, K, WHITE, B. E, RAO, R, SADD, M, SWIFT, C. T, YATER, J, HRADSKY, B, STRAUB, S, GASQUET, H, VISHNUBHOTLA, L
Source:
14TH Workshop on dielectrics in microelectronics (WoDiM 2006)Microelectronics and reliability. 47(4-5):585-592
Publisher Information:
Oxford: Elsevier, 2007.
Publication Year:
2007
Physical Description:
print, 21 ref
Original Material:
INIST-CNRS
Subject Terms:
Electronics, Electronique, Sciences exactes et technologie, Exact sciences and technology, Sciences appliquees, Applied sciences, Electronique, Electronics, Electronique des semiconducteurs. Microélectronique. Optoélectronique. Dispositifs à l'état solide, Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices, Circuits intégrés, Integrated circuits, Conception. Technologies. Analyse fonctionnement. Essais, Design. Technologies. Operation analysis. Testing, Circuits intégrés par fonction (dont mémoires et processeurs), Integrated circuits by function (including memories and processors), Electronique moléculaire, nanoélectronique, Molecular electronics, nanoelectronics, Stockage et lecture de l'information, Storage and reproduction of information, Mémoires de masse magnétiques et optiques, Magnetic and optical mass memories, Basse tension, Low voltage, Baja tensión, Blocage Coulomb, Coulomb blockade, Bloqueo Coulomb, Circuit intégré, Integrated circuit, Circuito integrado, Dispositif à mémoire, Memory devices, Isolation électrique, Electrical insulation, Aislamiento eléctrico, Mémoire non volatile, Non volatile memory, Memoria no volátil, Nanocristal, Nanocrystal, Nanoélectronique, Nanoelectronics, Nanoelectrónica, Système embarqué, Embedded systems, Technologie grille flottante, Floating gate technology, Tecnología rejilla flotante
Document Type:
Conference Conference Paper
File Description:
text
Language:
English
Author Affiliations:
Freescale Semiconductor, 3501 Ed. Bluestein Boulevard, Austin, TX 78750, United States
ISSN:
0026-2714
Access URL:
http://pascal-francis.inist.fr/vibad/index.php?action=search&terms=18790340
Rights:
Copyright 2007 INIST-CNRS
CC BY 4.0
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
Notes:
Electronics
Accession Number:
edscal.18790340
Database:
PASCAL Archive

Further Information

In this paper, we present key features of silicon nanocrystal memory technology. This technology is an attractive candidate for scaling of embedded non-volatile memory (NVM). By replacing a continuous floating gate by electrically isolated silicon nanocrystals embedded in an oxide, this technology mitigates the vulnerability of charge loss through tunnel oxide defects and hence permits tunnel oxide and operating voltage scaling along with accompanied process simplifications. However, going to discrete nanocrystals brings new physical attributes that include the impact of Coulomb blockade or charge confinement, science of formation of nanocrystals of correct size and density and the role of fluctuations, all of which are addressed in this paper using single memory cell and memory array data.