Result: Peculiarities of electron tunnel injection to the drain of EEPROMs
Title:
Peculiarities of electron tunnel injection to the drain of EEPROMs
Authors:
Source:
14TH Workshop on dielectrics in microelectronics (WoDiM 2006)Microelectronics and reliability. 47(4-5):631-634
Publisher Information:
Oxford: Elsevier, 2007.
Publication Year:
2007
Physical Description:
print, 6 ref
Original Material:
INIST-CNRS
Subject Terms:
Electronics, Electronique, Sciences exactes et technologie, Exact sciences and technology, Sciences appliquees, Applied sciences, Electronique, Electronics, Electronique des semiconducteurs. Microélectronique. Optoélectronique. Dispositifs à l'état solide, Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices, Circuits intégrés, Integrated circuits, Conception. Technologies. Analyse fonctionnement. Essais, Design. Technologies. Operation analysis. Testing, Circuits intégrés par fonction (dont mémoires et processeurs), Integrated circuits by function (including memories and processors), Caractéristique courant temps, Current time characteristic, Característica corriente tiempo, Champ intense, High field, Campo intenso, Circuit intégré, Integrated circuit, Circuito integrado, Courbure bande, Band bending, Curvatura banda, Effet tunnel, Tunnel effect, Efecto túnel, Injection électron, Electron injection, Inyección electrón, Ionisation choc, Impact ionization, Ionización choque, Matériau dopé, Doped materials, Mesure dynamique, Dynamic measurement, Medición dinamica, Mémoire EEPROM, EEPROM memory, Memoria EEPROM, Paire électron trou, Electron hole pair, Par electrón hueco, Régime hors équilibre, Non equilibrium conditions, Régimen fuera equilibrio
Document Type:
Conference
Conference Paper
File Description:
text
Language:
English
Author Affiliations:
Laboratoire de Physique de la Matière, UMR CNRS 5511, INSA de Lyon, Bât. Blaise Pascal, 7 av. Capelle, 69621 Villeurbanne, France
STMicroelectronics, ZI Rousset, BP2, 13106 Rousset, France
STMicroelectronics, ZI Rousset, BP2, 13106 Rousset, France
ISSN:
0026-2714
Rights:
Copyright 2007 INIST-CNRS
CC BY 4.0
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
CC BY 4.0
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
Notes:
Electronics
Accession Number:
edscal.18790350
Database:
PASCAL Archive
Further Information
A specific time-resolved dynamic current measurement procedure is used to characterize high-field electron tunnel injection to the drain of EEPROMs. This allows the direct observation of a transient regime eventually occurring in the case of moderately doped drain. Another peculiarity is also evidenced, namely a stationary regime where measured current is far higher than anticipated by simulation. This is attributed to a non-equilibrium charge versus band-bending in the drain which is controlled by electron-hole pairs subsequent to impact ionization of electrons tunnelling from the gate.