Result: Volatility and vapourisation characterisation of new precursors
Title:
Volatility and vapourisation characterisation of new precursors
Source:
14TH Workshop on dielectrics in microelectronics (WoDiM 2006)Microelectronics and reliability. 47(4-5):718-721
Publisher Information:
Oxford: Elsevier, 2007.
Publication Year:
2007
Physical Description:
print, 1 ref
Original Material:
INIST-CNRS
Subject Terms:
Electronics, Electronique, Sciences exactes et technologie, Exact sciences and technology, Sciences appliquees, Applied sciences, Electronique, Electronics, Electronique des semiconducteurs. Microélectronique. Optoélectronique. Dispositifs à l'état solide, Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices, Fabrication microélectronique (technologie des matériaux et des surfaces), Microelectronic fabrication (materials and surfaces technology), Dépôt chimique phase vapeur, Chemical vapor deposition, Depósito químico fase vapor, Fabrication microélectronique, Microelectronic fabrication, Fabricación microeléctrica, Procédé fabrication, Manufacturing process, Procedimiento fabricación, Précurseur, Precursor, Thermogravimétrie, Thermogravimetry, Termogravimetría
Document Type:
Conference
Conference Paper
File Description:
text
Language:
English
Author Affiliations:
Epichem Limited, Power Road, Bromborough, Wirral, CH62 3QF, United Kingdom
ISSN:
0026-2714
Rights:
Copyright 2007 INIST-CNRS
CC BY 4.0
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
CC BY 4.0
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
Notes:
Electronics
Accession Number:
edscal.18790370
Database:
PASCAL Archive
Further Information
The introduction of new chemicals into semiconductor production processes is an expensive, time consuming exercise. A key parameter required to ensure equipment set up is well suited to the source from the outset of trials is reliable precursor volatility data. In this paper we present the latest vapour pressure values for the technologically interesting Hf and Ru precursors and corresponding thermogravimetric analysis results. A discussion on the interpretation of the values obtained highlights the careful considerations required to ensure promising source materials are not ruled out prematurely.