Result: Passivation issues in active pixel CMOS image sensors
Title:
Passivation issues in active pixel CMOS image sensors
Authors:
Source:
14TH Workshop on dielectrics in microelectronics (WoDiM 2006)Microelectronics and reliability. 47(4-5):739-742
Publisher Information:
Oxford: Elsevier, 2007.
Publication Year:
2007
Physical Description:
print, 10 ref
Original Material:
INIST-CNRS
Subject Terms:
Electronics, Electronique, Sciences exactes et technologie, Exact sciences and technology, Sciences appliquees, Applied sciences, Electronique, Electronics, Matériaux, Materials, Electronique des semiconducteurs. Microélectronique. Optoélectronique. Dispositifs à l'état solide, Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices, Circuits intégrés, Integrated circuits, Conception. Technologies. Analyse fonctionnement. Essais, Design. Technologies. Operation analysis. Testing, Dispositifs à images, Imaging devices, Capteur image CMOS, CMOS image sensors, Circuit intégré, Integrated circuit, Circuito integrado, Courant obscurité, Dark current, Corriente obscuridad, Evaluation performance, Performance evaluation, Evaluación prestación, Passivation, Pasivación, Pixel intelligent, Smart pixels, Propriété matériau, Properties of materials, Propiedad material, Recuit thermique, Thermal annealing, Recocido térmico
Document Type:
Conference
Conference Paper
File Description:
text
Language:
English
Author Affiliations:
ST Microelectronics, 850, Rue Jean Monnet, 38926 Crolles, France
ISSN:
0026-2714
Rights:
Copyright 2007 INIST-CNRS
CC BY 4.0
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
CC BY 4.0
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
Notes:
Electronics
Accession Number:
edscal.18790375
Database:
PASCAL Archive
Further Information
Most of the integrated circuit industry follows a final passivation process which consists of a low temperature passivation layer deposition and a thermal anneal. This two step process is particularly relevant in CMOS imagers where the dark current is a major issue. This work shows that passivation material plays an important role in the device performance. We measured H diffusion through the final silicon nitride layer and we compare these results with the material properties and passivation efficiency.