Result: Modification of porous ultra-low K dielectric by electron-beam curing
Title:
Modification of porous ultra-low K dielectric by electron-beam curing
Authors:
Source:
14TH Workshop on dielectrics in microelectronics (WoDiM 2006)Microelectronics and reliability. 47(4-5):764-768
Publisher Information:
Oxford: Elsevier, 2007.
Publication Year:
2007
Physical Description:
print, 13 ref
Original Material:
INIST-CNRS
Subject Terms:
Electronics, Electronique, Sciences exactes et technologie, Exact sciences and technology, Sciences appliquees, Applied sciences, Electronique, Electronics, Electronique des semiconducteurs. Microélectronique. Optoélectronique. Dispositifs à l'état solide, Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices, Circuits intégrés, Integrated circuits, Conception. Technologies. Analyse fonctionnement. Essais, Design. Technologies. Operation analysis. Testing, Caractéristique électrique, Electrical characteristic, Característica eléctrica, Circuit intégré, Integrated circuit, Circuito integrado, Composition chimique, Chemical composition, Composición química, Diélectrique basse permittivité, Low k dielectric, Dieléctrico baja constante dieléctrica, Durcissement, Hardening, Endurecimiento, Faisceau électronique, Electron beam, Haz electrónico, Fiabilité, Reliability, Fiabilidad, Interconnexion, Interconnection, Interconexión, Irradiation électron, Electron irradiation, Irradiación electrón, Matériau poreux, Porous material, Material poroso, Propriété diélectrique, Dielectric properties, Propiedad dieléctrica
Document Type:
Conference
Conference Paper
File Description:
text
Language:
English
Author Affiliations:
LETI, 17 rue des Martyrs, 38054 Grenoble, France
ST Microelectronics, 850 rue J. Monnet, 38926 Crolles, France
ST Microelectronics, 850 rue J. Monnet, 38926 Crolles, France
ISSN:
0026-2714
Rights:
Copyright 2007 INIST-CNRS
CC BY 4.0
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
CC BY 4.0
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
Notes:
Electronics
Accession Number:
edscal.18790381
Database:
PASCAL Archive
Further Information
The impact of electron irradiation on ultra-low K (ULK) porous dielectric material used in advanced interconnects is analyzed using spectroscopic and electrical characterizations. The e-beam irradiation modifies the chemical composition, the porosity and the optical indexes. The effects of e-beam curing on electrical properties and dielectric reliability are also evaluated.