• Thermal treatment for optical...

Treffer: Thermal treatment for optical proximity correction

Title:
Thermal treatment for optical proximity correction
Authors:
KIM, Sang-Kon
Source:
Proceedings of the 32nd International Conference on Micro- and Nano-Engineering, Barcelona, 17-20 September 2006Microelectronic engineering. 84(5-8):766-769
Publisher Information:
Amsterdam: Elsevier Science, 2007.
Publication Year:
2007
Physical Description:
print, 5 ref
Original Material:
INIST-CNRS
Subject Terms:
Electronics, Electronique, Sciences exactes et technologie, Exact sciences and technology, Sciences appliquees, Applied sciences, Electronique, Electronics, Electronique des semiconducteurs. Microélectronique. Optoélectronique. Dispositifs à l'état solide, Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices, Circuits intégrés, Integrated circuits, Conception. Technologies. Analyse fonctionnement. Essais, Design. Technologies. Operation analysis. Testing, Fabrication microélectronique (technologie des matériaux et des surfaces), Microelectronic fabrication (materials and surfaces technology), Assemblage circuit intégré, Integrated circuit bonding, Brasage avec refusion, Reflow soldering, Soldeo con refusión, Effet proximité, Proximity effect, Efecto proximidad, Effet température, Temperature effect, Efecto temperatura, Fabrication microélectronique, Microelectronic fabrication, Fabricación microeléctrica, Lithographie UV, UV lithography, Litografía UV, Photolithographie, Photolithography, Fotolitografía, Rayonnement UV extrême, Vacuum ultraviolet radiation, Radiación ultravioleta extrema, Résist amplification chimique, Chemically amplified resist, Resistencia amplificación química, Taille critique, Critical size, Traitement thermique, Heat treatment, Tratamiento térmico, Trou interconnexion, Via hole, Agujero interconexión, Correction optique proximité, Optical proximity correction, Corrección de proximidad óptica, 85.40.HP; 78.20.Bh; 85.40.Bh, Lithography simulation; Chemically-amplified resist; Thermal process; Softbake; Post-exposure bake; Thermal reflow
Document Type:
Konferenz Conference Paper
File Description:
text
Language:
English
Author Affiliations:
School of Information, Communications and Electronics Engineering, Catholic University of Korea, Bucheon, Korea, Republic of
ISSN:
0167-9317
Access URL:
http://pascal-francis.inist.fr/vibad/index.php?action=search&terms=18807307
Rights:
Copyright 2007 INIST-CNRS
CC BY 4.0
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
Notes:
Electronics
Accession Number:
edscal.18807307
Database:
PASCAL Archive

Weitere Informationen

For 32-nm technology node, thermal treatment is one of the process extension techniques with 193-nm ArF lithography equipment and chemically-amplified resist (CAR). However, it is difficult to use these techniques in the manufacture process because the optical proximity effect of thermal effects is quite severe. In this paper, thermal processes, such as softbake, post-exposure bake and thermal reflow, are described and modeled to investigate the property changes of a positive type, 193-nm CAR. The simulated results agree well with the experimental results. For the optical proximity correction (OPC) of the thermal effects, an orthogonal functional method is introduced. Due to contact hole (C/H) pattern, the underbake of post-exposure bake (PEB) and thermal reflow are performed for the 45-nm critical dimension (CD) by using the OPC simulated images, to demonstrate the possibility of controlling these thermal processes for the formation of 32-nm CD.