Treffer: The UV-nanoimprint lithography equipment with multi-head imprinting unit for sub-50 nm half-pitch patterns

Title:
The UV-nanoimprint lithography equipment with multi-head imprinting unit for sub-50 nm half-pitch patterns
Source:
Proceedings of the 32nd International Conference on Micro- and Nano-Engineering, Barcelona, 17-20 September 2006Microelectronic engineering. 84(5-8):963-966
Publisher Information:
Amsterdam: Elsevier Science, 2007.
Publication Year:
2007
Physical Description:
print, 5 ref
Original Material:
INIST-CNRS
Document Type:
Konferenz Conference Paper
File Description:
text
Language:
English
Author Affiliations:
Korea Institute of Machinery and Materials, 171 Jang-dong, Yusung-ku, DaeJeon 305-600, Korea, Republic of
ISSN:
0167-9317
Rights:
Copyright 2007 INIST-CNRS
CC BY 4.0
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
Notes:
Electronics
Accession Number:
edscal.18807353
Database:
PASCAL Archive

Weitere Informationen

Nanoimprinting lithography (NIL) is a promising technology to produce sub-50 nm half-pitch features on silicon- and/or quartz-based substrates. It is well-known as the next generation lithography. Especially, the UV-nanoimprint lithography technology has advantages of the simple process, low cost, high replication fidelity and relatively high throughput. In this paper, chip-size multi-head imprinting unit with compliance stage and overlay/alignment system with moiré and dual grating unit are proposed in order to fabricate sub-50 nm half-pitch patterns. These systems are set-up and performed in single-step nanoimprinting tool (ANT-4) which has several functional units for nanoimprinting process. Using the UV-NIL tool, 50 nm, 70 nm and 100 nm half-pitch dot and line patterns are obtained. Also, 20 nm overlay/alignment accuracy is obtained by means of the proposed method.