Treffer: The passivation layer formation in the cryo-etching plasma process

Title:
The passivation layer formation in the cryo-etching plasma process
Authors:
DUSSART, R, MELLHAOUI, X, TILLOCHER, T, LEFAUCHEUX, P, BOUFNICHEL, M, RANSON, P
Source:
Proceedings of the 32nd International Conference on Micro- and Nano-Engineering, Barcelona, 17-20 September 2006Microelectronic engineering. 84(5-8):1128-1131
Publisher Information:
Amsterdam: Elsevier Science, 2007.
Publication Year:
2007
Physical Description:
print, 7 ref
Original Material:
INIST-CNRS
Subject Terms:
Electronics, Electronique, Sciences exactes et technologie, Exact sciences and technology, Sciences appliquees, Applied sciences, Electronique, Electronics, Electronique des semiconducteurs. Microélectronique. Optoélectronique. Dispositifs à l'état solide, Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices, Fabrication microélectronique (technologie des matériaux et des surfaces), Microelectronic fabrication (materials and surfaces technology), Ellipsométrie, Ellipsometry, Elipsometría, Fabrication microélectronique, Microelectronic fabrication, Fabricación microeléctrica, Gravure plasma, Plasma etching, Grabado plasma, Passivation, Pasivación, Pastille électronique, Wafer, Pastilla electrónica, Température ambiante, Room temperature, Temperatura ambiente, Traitement par plasma, Plasma assisted processing, Cryo-etching, Passivation layer, Plasma process
Document Type:
Konferenz Conference Paper
File Description:
text
Language:
English
Author Affiliations:
GREMI/Polytech'Orleans, Orléans 45067, France
ST Microelectronics, Tours 37071, France
ISSN:
0167-9317
Access URL:
http://pascal-francis.inist.fr/vibad/index.php?action=search&terms=18807392
Rights:
Copyright 2007 INIST-CNRS
CC BY 4.0
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
Notes:
Electronics
Accession Number:
edscal.18807392
Database:
PASCAL Archive

Weitere Informationen

The growth and destruction of the SiOxFy passivation layer is investigated in the so-called cryogenic process used for silicon etching. We show that etching products (SiF4) can play an important role in its formation. It can explain why overpassivating regime characterized by the appearance of black silicon is preferentially obtained in large structures. Test experiments clearly show that both SiFx and O radicals are necessary to create the passivation layer. By separating SiF4 plasma and O2 plasma, we could conclude that the reaction mainly occurred at the sidewalls of the structure. If we increase the power of the oxygen plasma, the passivation layer can be reinforced. Finally, we grew the passivation layer on a flat surface by using a system of electrostatic grids to get rid of ions and electrons in order to enhance the deposition on the surface. Ellipsometric analysis is reported during the growth of the passivation layer and its destruction, which occurs when the wafer is warmed back up to ambient temperature.