Result: Reliability of poly 3,4-ethylenedioxythiophene strain gauge

Title:
Reliability of poly 3,4-ethylenedioxythiophene strain gauge
Source:
Proceedings of the 32nd International Conference on Micro- and Nano-Engineering, Barcelona, 17-20 September 2006Microelectronic engineering. 84(5-8):1270-1273
Publisher Information:
Amsterdam: Elsevier Science, 2007.
Publication Year:
2007
Physical Description:
print, 12 ref
Original Material:
INIST-CNRS
Subject Terms:
Electronics, Electronique, Sciences exactes et technologie, Exact sciences and technology, Sciences appliquees, Applied sciences, Electronique, Electronics, Appareillage électronique et fabrication. Composants passifs, circuits imprimés, connectique, Electronic equipment and fabrication. Passive components, printed wiring boards, connectics, Electronique des semiconducteurs. Microélectronique. Optoélectronique. Dispositifs à l'état solide, Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices, Circuits intégrés, Integrated circuits, Conception. Technologies. Analyse fonctionnement. Essais, Design. Technologies. Operation analysis. Testing, Dispositifs à ondes acoustiques, piézoélectriques, piézorésistifs, Acoustic wave devices, piezoelectric and piezoresistive devices, Fabrication microélectronique (technologie des matériaux et des surfaces), Microelectronic fabrication (materials and surfaces technology), Capteur mesure, Measurement sensor, Captador medida, Essai circuit intégré, Integrated circuit testing, Fabrication microélectronique, Microelectronic fabrication, Fabricación microeléctrica, Fiabilité, Reliability, Fiabilidad, Gravure ionique réactive, Reactive ion etching, Grabado iónico reactivo, Jauge contrainte, Resistance strain gauge, Gauge tensión, Lithographie UV, UV lithography, Litografía UV, Mesure déformation, Deformation measurement, Medición deformación, Micromachine, Micromáquina, Photolithographie, Photolithography, Fotolitografía, Polymère conducteur, Conducting polymers, Résistance électrique, Resistor, Resistencia eléctrica(componente), Résistivité couche, Sheet resistivity, Resistividad capa, 0707D, All-polymer sensors, Conducting polymer, Piezoresistive polymer
Document Type:
Conference Conference Paper
File Description:
text
Language:
English
Author Affiliations:
SCF-Technologies AIS, Gammel Keøge Ladevej 22 H, 2500 Valby, Denmark
MIC-Department of Micro and Nanotechnology, Building 345 East, Danish Technical University, 2800 Kongens Lyngby, Denmark
Department of Chemical Engineering, Building 423, Danish Technical University, 2800 Kongens Lyngby, Denmark
ISSN:
0167-9317
Rights:
Copyright 2007 INIST-CNRS
CC BY 4.0
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
Notes:
Electronics
Accession Number:
edscal.18807425
Database:
PASCAL Archive

Further Information

We report on the experimentally observed reliability of the piezoresistive effect in strained poly 3,4-ethylenedioxythiophene (PEDT). PEDT is an intrinsic conductive polymer which can be patterned by conventional Cleanroom processing, and thus presents a promising material for all-polymer Microsystems. The measurements are made on microfabricated test chips with PEDT resistors patterned by conventional UV-lithography and reactive ion etching (RIE). We determine a gauge factor of 3.41 ± 0.42 for the strained PEDT and we see an increase in resistivity from 1.98 x 10-4 Ωm to 2.22 x 10-4 Ω m when the polymer is immersed in water for 30 min. The resistivity continues to increase to 2.66 x 10-4 Ω m when the resistor is thermally dried due to interactions with oxygen from the ambient. We measure the PEDT sheet resistance over a period of four weeks and see small fluctuations caused by humidity variations.