Treffer: Towards wet anisotropic silicon etching of perfect pyramidal pits
Title:
Towards wet anisotropic silicon etching of perfect pyramidal pits
Authors:
Source:
Proceedings of the 32nd International Conference on Micro- and Nano-Engineering, Barcelona, 17-20 September 2006Microelectronic engineering. 84(5-8):1419-1422
Publisher Information:
Amsterdam: Elsevier Science, 2007.
Publication Year:
2007
Physical Description:
print, 6 ref
Original Material:
INIST-CNRS
Subject Terms:
Electronics, Electronique, Sciences exactes et technologie, Exact sciences and technology, Sciences appliquees, Applied sciences, Electronique, Electronics, Electronique des semiconducteurs. Microélectronique. Optoélectronique. Dispositifs à l'état solide, Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices, Fabrication microélectronique (technologie des matériaux et des surfaces), Microelectronic fabrication (materials and surfaces technology), Cavité, Cavity, Cavidad, Fabrication microélectronique, Microelectronic fabrication, Fabricación microeléctrica, Figure attaque, Etch pit, Figura ataque, Gravure, Engraving, Grabado, Pastille électronique, Wafer, Pastilla electrónica, Procédé voie humide, Wet process, Procedimiento vía húmeda, KOH, Pyramidal etch pit, Sharp apex, Silicon anisotropic etching
Document Type:
Konferenz
Conference Paper
File Description:
text
Language:
English
Author Affiliations:
Center for International Research on MicroMechatronics (CIRMM), Institute of Industrial Science (IIS), The University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan
ISSN:
0167-9317
Rights:
Copyright 2007 INIST-CNRS
CC BY 4.0
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
CC BY 4.0
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
Notes:
Electronics
Accession Number:
edscal.18807459
Database:
PASCAL Archive
Weitere Informationen
Wet anisotropic etching of sharp silicon cavities is a critical step in the fabrication of nanopores and scanning probe tips. This paper reports a straightforward method to reliably obtain sharp pyramidal cavities in (10 0) oriented silicon wafers from a relatively inaccurate mask fabricated with a conventional laser exposure system. The relative angular orientation of the mask patterns toward the crystallographic planes of silicon improves the sharpness of pyramidal etch pits. A trigonometric relation shows that the rotation of the mask squares up the etch patterns, which results in the sharpening of the pyramidal structures. This noticeable effect could be verified in (100)-silicon wafers etched in potassium hydroxide (KOH).