Result: Nickel nanoparticle deposition at room temperature for memory applications

Title:
Nickel nanoparticle deposition at room temperature for memory applications
Authors:
VERRELLI, E, TSOUKALAS, D, GIANNAKOPOULOS, K, KOUVATSOS, D, NORMAND, P, IOANNOU, D. E
Source:
INFOS 2007: Proceedings of the 15th Biennial Conference on Insulating Films on Semiconductors, June 20-23, 2007, Glyfada Athens, GreeceMicroelectronic engineering. 84(9-10):1994-1997
Publisher Information:
Amsterdam: Elsevier Science, 2007.
Publication Year:
2007
Physical Description:
print, 4 ref
Original Material:
INIST-CNRS
Subject Terms:
Electronics, Electronique, Sciences exactes et technologie, Exact sciences and technology, Sciences appliquees, Applied sciences, Electronique, Electronics, Electronique des semiconducteurs. Microélectronique. Optoélectronique. Dispositifs à l'état solide, Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices, Circuits intégrés, Integrated circuits, Conception. Technologies. Analyse fonctionnement. Essais, Design. Technologies. Operation analysis. Testing, Circuits intégrés par fonction (dont mémoires et processeurs), Integrated circuits by function (including memories and processors), Dispositifs diélectriques et dispositifs à base de verre et de solides amorphes, Dielectric, amorphous and glass solid devices, Fabrication microélectronique (technologie des matériaux et des surfaces), Microelectronic fabrication (materials and surfaces technology), Circuit intégré, Integrated circuit, Circuito integrado, Condensateur MOS, MOS capacitor, Capacidad MOS, Diélectrique, Dielectric materials, Dieléctrico, Dépôt physique phase vapeur, Physical vapor deposition, Deposición física fase vapor, Effacement, Erasure, Borradura, Effet tunnel, Tunnel effect, Efecto túnel, Enregistrement, Recording, Registro, Fabrication microélectronique, Microelectronic fabrication, Fabricación microeléctrica, Mémoire non volatile, Non volatile memory, Memoria no volátil, Nanoparticule, Nanoparticle, Nanopartícula, Stockage charge, Charge storage, Almacienamiento carga, Technique vide, Vacuum technique, Técnica vacío, Temps stockage, Storage time, Tiempo almacenamiento, Température ambiante, Room temperature, Temperatura ambiente, Vide poussé, High vacuum, Tension grille, Gate voltage, PVD, metallic nanoparticles, non volatile memory
Document Type:
Conference Conference Paper
File Description:
text
Language:
English
Author Affiliations:
National Technical University of Athens School of Applied Sciences, 15780 Zografou, Greece
Inst. of Materials Science, NCSR Demokritos, NCSR Demokritos, 153 10, Aghia Paraskevi, Greece
Institute of Microelectronics, NCSR Demokritos, Greece
George Mason Univ, Fairfax VA 22030, United States
ISSN:
0167-9317
Access URL:
http://pascal-francis.inist.fr/vibad/index.php?action=search&terms=18853494
Rights:
Copyright 2007 INIST-CNRS
CC BY 4.0
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
Notes:
Electronics
Accession Number:
edscal.18853494
Database:
PASCAL Archive

Further Information

In this work we investigate the non-volatile memory behavior of Ni nanoparticles embedded within an insulating matrix. Nickel nanoparticles are deposited at room temperature by a new high-vacuum technique over a 4 nm tunneling thermal SiO2 layer followed by the deposition of HfO2 as a control insulator. Memory windows of ∼1.5V are observed in MOS capacitors at gate pulse voltages of 8V. Charge retention for write and erase state clearly indicate long time charge storage behavior.