Treffer: On the RTS phenomenon and trap nature in flash memory tunnel oxide
Title:
On the RTS phenomenon and trap nature in flash memory tunnel oxide
Authors:
Source:
INFOS 2007: Proceedings of the 15th Biennial Conference on Insulating Films on Semiconductors, June 20-23, 2007, Glyfada Athens, GreeceMicroelectronic engineering. 84(9-10):1998-2001
Publisher Information:
Amsterdam: Elsevier Science, 2007.
Publication Year:
2007
Physical Description:
print, 9 ref
Original Material:
INIST-CNRS
Subject Terms:
Electronics, Electronique, Sciences exactes et technologie, Exact sciences and technology, Sciences appliquees, Applied sciences, Electronique, Electronics, Electronique des semiconducteurs. Microélectronique. Optoélectronique. Dispositifs à l'état solide, Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices, Interfaces, Circuits intégrés, Integrated circuits, Conception. Technologies. Analyse fonctionnement. Essais, Design. Technologies. Operation analysis. Testing, Circuits intégrés par fonction (dont mémoires et processeurs), Integrated circuits by function (including memories and processors), Stockage et lecture de l'information, Storage and reproduction of information, Mémoires de masse magnétiques et optiques, Magnetic and optical mass memories, Circuit intégré, Integrated circuit, Circuito integrado, Contact isolant semiconducteur, Semiconductor insulator contact, Contacto aislante semiconductor, Dispositif à mémoire, Memory devices, Effet température, Temperature effect, Efecto temperatura, Endommagement, Damaging, Deterioración, Fluctuation courant, Current fluctuations, Mémoire flash, Flash memory, Memoria flash, Nitruration, Nitriding, Nitruración, Bruit télégraphe aléatoire, Random telegraph noise, Ruido telegráfico errático, RTS, memory cell, traps in tunnel oxide
Document Type:
Konferenz
Conference Paper
File Description:
text
Language:
English
Author Affiliations:
ST Microelectronics, Central R&D, 20041 Agrate Brianza, Italy
ISSN:
0167-9317
Rights:
Copyright 2007 INIST-CNRS
CC BY 4.0
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
CC BY 4.0
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
Notes:
Electronics
Accession Number:
edscal.18853495
Database:
PASCAL Archive
Weitere Informationen
Aim of this work is the investigation of Random Telegraph Signal (RTS) in Flash memory cell. Current fluctuations have been performed also as a function of temperature in order to characterize the nature of traps responsible for noise in relatively thick tunnel oxide. Trap energy level and spatial localization from the Si/SiO2 interface has been determined. The impact of stress has been also investigated showing no significant noise increase in single cell. This has been ascribed to the tunnel oxide technology whose heavy nitridation allows minimizing the degradation of the region responsible for RTS in Flash memory cell.