Treffer: Improvement of memory properties for MANOS-type nonvolatile memory devices with high-pressure wet vapor annealing
Title:
Improvement of memory properties for MANOS-type nonvolatile memory devices with high-pressure wet vapor annealing
Authors:
Source:
INFOS 2007: Proceedings of the 15th Biennial Conference on Insulating Films on Semiconductors, June 20-23, 2007, Glyfada Athens, GreeceMicroelectronic engineering. 84(9-10):2002-2005
Publisher Information:
Amsterdam: Elsevier Science, 2007.
Publication Year:
2007
Physical Description:
print, 7 ref
Original Material:
INIST-CNRS
Subject Terms:
Electronics, Electronique, Sciences exactes et technologie, Exact sciences and technology, Sciences appliquees, Applied sciences, Electronique, Electronics, Electronique des semiconducteurs. Microélectronique. Optoélectronique. Dispositifs à l'état solide, Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices, Circuits intégrés, Integrated circuits, Conception. Technologies. Analyse fonctionnement. Essais, Design. Technologies. Operation analysis. Testing, Circuits intégrés par fonction (dont mémoires et processeurs), Integrated circuits by function (including memories and processors), Stockage et lecture de l'information, Storage and reproduction of information, Mémoires de masse magnétiques et optiques, Magnetic and optical mass memories, Caractéristique électrique, Electrical characteristic, Característica eléctrica, Circuit intégré, Integrated circuit, Circuito integrado, Courant fuite, Leakage current, Corriente escape, Densité courant, Current density, Densidad corriente, Dispositif à mémoire, Memory devices, Effacement, Erasure, Borradura, Effet haute pression, High-pressure effects, Enregistrement, Recording, Registro, Evaluation performance, Performance evaluation, Evaluación prestación, Fiabilité, Reliability, Fiabilidad, Mémoire flash, Flash memory, Memoria flash, Mémoire non volatile, Non volatile memory, Memoria no volátil, Pression atmosphérique, Atmospheric pressure, Presión atmosférica, Recuit, Annealing, Recocido, Taux perte, Loss rate, Porcentaje pérdida, MANOS, blocking efficiency, high-pressure annealing, wet vapor annealing
Document Type:
Konferenz
Conference Paper
File Description:
text
Language:
English
Author Affiliations:
Department of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju, 500-712, Korea, Republic of
SDL, Samsung Advanced Institute of Technology, Simon, 446-712, Korea, Republic of
SDL, Samsung Advanced Institute of Technology, Simon, 446-712, Korea, Republic of
ISSN:
0167-9317
Rights:
Copyright 2007 INIST-CNRS
CC BY 4.0
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
CC BY 4.0
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
Notes:
Electronics
Accession Number:
edscal.18853496
Database:
PASCAL Archive
Weitere Informationen
Effects of high-pressure wet vapor annealing (HPWA) on the memory properties of Metal/Alumina/Nitride/Oxide/Silicon (MANOS)-type flash memory devices are studied. The Oxide/Nitride/Alumina (ONA) stacks were annealed in a high-pressure wet vapor ambient (N2:D2O = 10 atm:2 atm) at 250 °C for 5 min. It is found that HPWA can effectively passivate the intrinsic defects of the Al2O3 film by oxygen species, leading to the improvement of blocking efficiency. The HPWA significantly improved the electrical and reliability characteristics of ONA stacks, such as leakage current density, saturation level of erase, charge loss rate through the blocking oxide, and memory window after the program and erase cycles. HPWA shows promise for future MANOS-type flash memory devices.